Semiconductor device having multilayer interconnection structure and method for manufacturing the same

A method for manufacturing a semiconductor device including a thin film resistor, the method comprising:

• forming a diffusion layer in a surface region of a semiconductor substrate;
• forming a first insulating layer on a surface of the semiconductor substrate;
• forming a contact hole in the first insulating layer to expose the diffusion layer;
• forming a first wiring layer on the first insulating layer, the first wiring layer made of aluminum material and filling the contact hole to electrically communicate with the diffusion layer;
• forming a second insulating layer to cover the first wiring layer;
• forming the thin film resistor having a specific shape on the second insulating layer;
• forming a third insulating layer to cover the thin film resistor and the second insulating layer;
• forming a second wiring layer electrically communicating with the thin film resistor through an opening portion provided in the third insulating layer.