Method of fabricating a gate-control electrode for an IGBT transistor
AssigneeALSTOM Holdings
InventorsNicolas Changey, Alain Petitbon, Sophie Crouzy, Eric Ranchy
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Abstract
This method of fabricating a gate-control electrode (28) for an insulated-gate bipolar transistor, from a plate of electrically conducting material which is covered with an electrically insulating layer (22) and, on one of its large faces, delimits a connection pad intended to be soldered to the gate, includes the steps consisting in, on the pad, forming an electrically conductive layer (30) covering the electrically insulating layer (22), on the plate, forming an electrically conductive track for supplying the connection pad, and burying the supply track.
Claims8
Method of fabricating a gate-control electrode (28) for an insulated-gate bipolar transistor, from a plate (20) of electrically conducting material which is covered with an electrically insulating layer and, on one of its large faces, delimits a connection pad intended to be soldered to the gate, characterized in that it includes the steps consisting in:
- on the connection pad, forming an electrically conductive layer (30) covering the electrically insulating layer (22);
- on the plate, forming an electrically conductive supply track for supplying the connection pad;
- and
- burying the supply track.
Dependencies are inferred from the claim text.