Method of pocket implant modeling for a CMOS process

A method of determining operating characteristics of a theoretical microelectronic device having a pocket implant of dopantions, comprising the steps of:

• measuring experimental operating characteristics of experimental devices each having a pocket implant doped under substantially the same doping conditions;
• obtaining a one-dimensional doping profile of the dopant ions in the experimental devices;
• determining an experimental total lateral straggle of the dopant ions in response to the experimental operating characteristics and the one-dimensional doping profile;
• determining an experimental as-implanted straggle of the dopant ions in the experimental devices in response to the doping conditions;
• calculating an experimental thermal straggle of the dopant ions in response to the experimental as-implanted straggle and the experimental total lateral straggle;
• determining a theoretical as-implanted straggle of theoretical dopant ions in the theoretical device in response to theoretical doping conditions;
• calculating a theoretical total lateral straggle of the theoretical dopant ions utilizing the experimental thermal straggle and the theoretical as-implanted straggle;
• and
• predicting the theoretical operating characteristics of the theoretical device in response to the theoretical total lateral straggle.

A method of determining operating characteristics of a theoretical microelectronic device having a pocket implant, comprising the steps of:

• measuring experimental operating characteristics of experimental devices having a pocket implant doped under a substantially the same experimental implantation angle, experimental dopant ion energy, and experimental dopant ion energy;
• obtaining a one-dimensional doping profile of dopant ions in the experimental devices by utilizing a ion mass spectroscopy device;
• determining an experimental total lateral straggle of the dopant ions in the experimental devices in response to the experimental operating characteristics and the one-dimensional doping profile;
• determining an experimental as-implanted straggle in response to the experimental implantation angle, the experimental dopant ion energy, and the experimental dopant ion dosage;
• calculating an experimental thermal straggle by subtracting the experimental as-implanted straggle from the experimental total lateral straggle;
• determining a theoretical as-implanted straggle of theoretical dopant ions in the theoretical device in response to theoretical doping conditions;
• calculating a theoretical total lateral straggle of theoretical dopant ions utilizing the experimental thermal straggle and the theoretical as-implanted straggle;
• and
• predicting the theoretical operating characteristics of the theoretical device in response to the theoretical total lateral straggle.