Method of forming a semiconductor device
AssigneeNEC Corporation
InventorYoshihisa Matsubara
Life of this patent
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Abstract
In a semiconductor device, a pair of diffusion regions are placed in a silicon substrate. Herein, the diffusion regions serve as source and drain regions. Further, a gate oxide film is formed between the diffusion layers or regions and on the silicon substrate. Moreover, a gate electrode is placed on the gate oxide film. In addition, a diamond-like carbon layer is formed over the silicon substrate so as to cover at least the gate oxide film. With such a structure, the diamond-like carbon layer prevents water from diffusing into the gate oxide film.
Claims22
A method of manufacturing a semiconductor device having a silicon substrate, comprising:
- forming a pair of diffusion regions in said silicon substrate;
- depositing a gate oxide film between said diffusion regions and on said silicon substrate;
- forming a gate electrode on said gate oxide film;
- forming a silicide layer on exposed surfaces of said gate electrode and said diffusion regions;
- and
- forming a diamond-like carbon layer over said silicon substrate so as to cover at least said gate oxide film and so as to contact said silicide layer covering said diffusion regions and said gate electrode,
- wherein said diamond-like carbon layer prevents water from diffusing into said gate oxide film.
A method of manufacturing a semiconductor device having a silicon substrate, comprising:
- forming first silicon oxide films on said silicon substrate to electrically separate said device from another device,
- forming a pair of diffusion regions in said silicon substrate and between said first silicon oxide films;
- depositing a gate oxide film between said diffusion regions and on said silicon substrate;
- forming a gate electrode on said gate oxide film;
- forming a second silicon oxide film which excessively contains silicon so as to cover said first silicon oxide film, said diffusion regions, said oxide film and said gate electrode;
- forming a diamond-like carbon layer on said second silicon oxide film;
- and
- forming a third silicon oxide film which excessively contains silicon so as to cover said diamond-like carbon layer;
- and
- forming a fourth silicon oxide film so as to cover said third silicon oxide film,
- wherein said diamond-like carbon layer prevents water from diffusing into said oxide film.
A method of manufacturing a semiconductor device having a silicon substrate, comprising:
- forming a pair of diffusion regions in said silicon substrate;
- depositing a gate oxide film between said diffusion regions and on said silicon substrate;
- forming a gate electrode on said gate oxide film;
- forming a silicide layer on exposed surfaces of said gate electrode and said diffusion regions;
- forming a diamond-like carbon layer over said silicon substrate so as to cover at least said gate oxide film and so as to contact said silicide layer covering said diffusion regions and said gate electrode;
- and
- forming a silicon oxide film serving as an interlayer insulating film so as to cover said diamond-like carbon layer,
- wherein said diamond-like carbon layer prevents water from diffusing into said gate film.
Dependencies are inferred from the claim text.