Chemical resist thickness reduction process
AssigneeAdvanced Micro Devices, Inc.
InventorsRamkumar Subramanian, Michael K. Templeton, Bharath Rangarajan, Ursula Q. Quinto
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Abstract
In one embodiment, the present invention relates to a method of treating a resist layer involving the steps of providing the resist layer having a first thickness, the resist layer comprising a polymer having a labile group; contacting a coating containing at least one cleaving compound with the resist layer to form a deprotected resist layer at an interface between the resist layer and the coating; and removing the coating and the deprotected resist layer leaving a resist having a second thickness, wherein the second thickness is smaller than the first thickness.
Claims20
A method of treating a resist layer comprising:
- providing the resist layer having a first thickness, the resist layer comprising a polymer having a labile group;
- contacting a coating containing at least one cleaving compound with the resist layer to form a deprotected resist layer at an interface between the resist layer and the coating, the deprotected resist layer having a thickness from about 10 Å to about 5,000 Å;
- and
- removing the coating and the deprotected resist layer leaving a resist having a second thickness, wherein the second thickness is smaller than the first thickness.
A chemical resist thickness reduction process comprising:
- forming a resist layer having a first thickness, the resist layer comprising a polymer having an acid labile pendent group;
- depositing an acid containing coating over the resist layer, the acid containing coating comprising at least one acid and a coating material, thereby forming a deprotected resist layer at an interface between the resist layer and the acid containing coating, the deprotected resist layer having a thickness from about 10 Å to about 5,000 Å;
- and
- removing the acid containing coating and the deprotected resist layer thereby providing a resist layer having a second thickness, the first thickness greater than the second thickness.
A method of decreasing the thickness of a resist, comprising:
- providing a chemically amplified resist having a first thickness on a substrate;
- depositing an acid containing coating on the chemically amplified resist thereby forming a deprotected resist layer within the chemically amplified resist;
- and
- removing the acid containing coating and the deprotected resist layer leaving a chemically amplified resist having a second thickness, wherein the second thickness is at least about 10% smaller than the first thickness and the chemically amplified resist having the second thickness has a thickness from about 500 Å to about 5,000 Å.
Dependencies are inferred from the claim text.