Using different transmittance with attenuate phase shift mask (APSM) to compensate ADI critical dimension proximity

A line/space mask, comprising:

• a transparent mask substrate;
• a first number of first lines having a first width formed of a first thickness of light absorbing material on said transparent mask substrate, wherein said first thickness of said light absorbing material has a first transmittance;
• a second number of second lines having a second width formed of said first thickness of said light absorbing material on said transparent mask substrate;
• a second thickness of said light absorbing material formed on said transparent mask substrate between adjacent said first lines, wherein said second thickness of said light absorbing material has a second transmittance;
• and
• a third thickness of transparent phase shifting material formed on said first lines formed of said first thickness of said light absorbing material and said second lines formed of said first thickness of said light absorbing material, wherein said third thickness of said transparent phase shifting material produces a phase shift of 180°.

A method of forming a contact hole mask, comprising:

• providing a transparent mask substrate having a first number of first contact hole regions and a second number of second contact hole regions wherein each of said first contact hole regions have a first width and a first outer perimeter and each of said second contact hole regions have a second width and a second outer perimeter;
• forming a layer of light absorbing material having a first thickness on said transparent mask substrate, wherein said first thickness of said light absorbing material has a first transmittance;
• forming a layer of phase shifting material on said layer of light absorbing material, wherein said layer of phase shifting material provides a phase shift of 180°;
• forming a layer of resist material on said layer of phase shifting material;
• exposing that part of said layer of resist material directly over said first contact hole regions with a first exposure dose and that part of said layer of resist directly over said second contact hole regions with a second exposure dose, wherein said second exposure dose is greater than said first exposure dose;
• developing said layer of resist thereby forming a resist mask;
• etching away that part of said layer of phase shifting material directly over said first contact hole regions, that part of said layer of phase shifting material directly over said second contact hole regions, a first depth of that part of said layer of light absorbing material directly over said first contact hole regions, and that part of said layer of light absorbing material directly over said second contact hole regions using dry anisotropic etching and said resist mask, wherein said first depth is less than said first thickness and a second thickness is equal to said first depth subtracted from said first thickness;
• and
• removing the remaining said resist mask.

A method of forming a line/space mask, comprising:

• providing a transparent mask substrate having a first number of first line regions each having a first width and a second number of second line regions each having a second width;
• forming a layer of light absorbing material having a first thickness on said transparent mask substrate, wherein said first thickness of said light absorbing material has a first transmittance;
• forming a layer of phase shifting material on said layer of light absorbing material, wherein said layer of phase shifting material provides a phase shift of 180°;
• forming a layer of resist material on said layer of phase shifting material;
• exposing that part of said layer of resist material between adjacent said first line regions with a first exposure dose and the remaining part of said layer of resist which is not over said first line regions or said second line regions with a second exposure dose, wherein said second exposure dose is greater than said first exposure dose;
• developing said layer of resist thereby forming a resist mask;
• etching away that part of said layer of phase shifting material which is not over said first line regions or said second line regions, a first depth of that part of said layer of light absorbing material between adjacent said first line regions, and the remaining part of said layer of light absorbing material which is not directly over said first line regions or said second line regions using dry anisotropic etching and said resist mask, wherein said first depth is less than said first thickness and a second thickness is equal to said first depth subtracted from said first thickness;
• and
• removing the remaining said resist mask.