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US 6,273,945 B1Granted
Single crystal producing apparatus and method
AssigneeSumitomo Metal Industries, Ltd.
InventorYasuhiro Kogure
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AssigneeSumitomo Metal Industries, Ltd.
InventorYasuhiro Kogure
Estimating the term…
A silicon single crystal producing apparatus and method are disclosed. Contamination of a hot molten liquid due to a chuck mechanism is prevented where an upper end part of the silicon single crystal is gripped by the chuck mechanism and is raised after the silicon single crystal is produced. Elevation and rotation of the chuck mechanism can be controlled independently of elevation and rotation of a pulling wire. Before the upper end part of the silicon single crystal is gripped at a bottom part of a pull chamber, the chuck mechanism is set at a standby position at a top of the pull chamber. The chuck mechanism is lowered from the standby position to the grip position. A rotation frequency of the chuck mechanism during lowering is selected as a rotation frequency free of resonance. After lowering and gripping of the silicon single crystal, the chuck mechanism is raised while being rotated in synchronism with the pulling wire.
A silicon single crystal producing method comprising the steps of:
A silicon single crystal producing method, comprising:
A silicon single crystal producing apparatus comprising:
Dependencies are inferred from the claim text.