Method for forming a thin-film resistor
AssigneeUnited Microelectronics Corp.
InventorJia-Sheng Lee
Life of this patent
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Abstract
A method for forming a thin-film resistor includes forming two insulators on the thin-film resistor, forming contact holes by performing wet etching processes, and forming interconnect and contact plugs at the same time. The invention also provides another method for forming a thin-film resistor that forms a thin-film resistor over the passivation layer instead. That is, forming a thin-film resistor on the top of the device, so that the resistance can be re-modified according to the actual needs.
Claims30
A method for forming a thin-film resistor, comprising the steps of:
- providing a substrate having a first insulator disposed thereon;
- forming a thin-film resistor layer on the first insulator;
- patterning the thin-film resistor layer to form a thin-film,resistor;
- forming a second insulator on the substrate and the thin-film resistor;
- forming a third insulator on the second insulator;
- forming a first contact hole through said second and third insulators to expose a first region of said substrate;
- forming a second contact hole through said second and third insulators to expose a second region of said thin-film resistor, wherein said third insulator masks the second insulator in forming said second contact hole;
- and
- forming first and second interconnects by performing a metallization process to fill the first contact hole and the second contact hole with metal, respectively.
A method for forming a thin-film resistor, comprising steps of:
- providing a substrate, wherein the substrate comprises:
- at least a pre-formed device formed on the substrate;
- an insulator covering the substrate and the pre-formed device;
- at least an interconnect formed on the insulator, wherein the interconnect is connected to the pre-formed device;
- and
- a passivation layer covering the substrate;
- performing a photolithography and etching process to form a contact hole that exposes the interconnect;
- forming a thin-film resistor layer on the passivation layer, wherein the thin-film resistor layer also fills the contact hole, and wherein the thin-film resistor layer is electrically connected to the interconnect through the contact hole;
- and
- patterning the thin-film resistor layer to form a thin-film resistor.
A method for forming a thin-film resistor, comprising steps of;
- providing a substrate and a first insulator over the substrate;
- forming a thin-film resistor layer on the substrate;
- patterning the thin-film resistor layer to form a thin-film resistor;
- forming a second insulator on the substrate and the thin-film resistor;
- forming a third insulator on the second insulator;
- exposing the substrate by forming a first contact hole in the first insulator;
- exposing the thin-film resistor by forming a second contact hole in the second insulator and the third insulator;
- and
- simulatneously filing the first contact hole and the second contact hole with metal.
Dependencies are inferred from the claim text.