Method for reducing the susceptibility to chemical-mechanical polishing damage of an alignment mark formed in a semiconductor substrate

A method for processing a semiconductor substrate, comprising:

• patterning a groove within an alignment mark area of the semiconductor substrate for forming an alignment mark;
• forming a masking layer above the semiconductor substrate;
• patterning a window in the masking layer, wherein boundaries of the window substantially define a window area of the semiconductor substrate, and wherein the alignment mark area is contained within and part of the window area;
• and
• exposing an entirety of an upper surface of the semiconductor substrate within the window area to an etchant for recessing the upper surface of the semiconductor substrate within the window area below an upper surface of the semiconductor substrate outside the window area such that an alignment mark trench is formed within the window area.

A semiconductor topography, comprising:

• a semiconductor substrate;
• a window area of said semiconductor substrate, wherein an entirety of an upper surface of said semiconductor substrate within said window area is disposed an alignment mark trench depth below an upper surface of said semiconductor substrate outside of said window area such that an alignment mark trench is defined within said window area;
• an alignment mark area of said semiconductor substrate that is contained within and part of said window area;
• and
• an alignment mark arranged within said alignment mark area.