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US 6,271,594 B1Granted
Semiconductor device and method of manufacturing the same
AssigneeNEC Corporation
InventorYoshihisa Matsubara
Life of this patent
Estimating the term…
Abstract
In a semiconductor device, a pair of diffusion regions are placed in a silicon substrate. Herein, the diffusion regions serve as source and drain regions. Further, a gate oxide film is formed between the diffusion layers or regions and on the silicon substrate. Moreover, a gate electrode is placed on the gate oxide film. In addition, a diamond-like carbon layer is formed over the silicon substrate so as to cover at least the gate oxide film. With such a structure, the diamond-like carbon layer prevents water from diffusing into the gate oxide film.
Claims19
A semiconductor device having a silicon substrate, comprising:
- first silicon oxide films on said silicon substrate to electrically separate said device from another device;
- a pair of diffusion regions in said substrate between said first silicon oxide films and which serves as source and drain regions;
- a gate oxide film formed between said diffusion regions and on said silicon substrate;
- a gate electrode placed on said gate oxide film;
- silicide layers formed on said gate electrode and in surface regions of said diffusion regions;
- a second silicon oxide film covering said first silicon oxide film, said diffusion regions, said gate oxide film, said gate electrode and said silicide layers;
- a diamond-like carbon layer formed on said second silicon oxide film and forming a water impermeable barrier over said gate oxide film;
- a third silicon oxide film formed on said diamond-like carbon layer;
- and
- a fourth silicon oxide film formed on said third silicon oxide film,
- wherein said second silicon oxide film, said diamond-like carbon layer, said third silicon oxide film and said fourth silicon oxide film are sequentially laminated in this order over said silicon substrate so as to serve as interlayer insulative layers.
8 more elements
A semiconductor device having a silicon substrate, comprising:
- first silicon oxide films on said silicon substrate to electrically separate said device from another device,
- a pair of diffusion regions placed in said silicon substrate and between said first silicon oxide films and which serve as source and drain regions;
- a gate oxide film formed between said diffusion regions and on said silicon substrate;
- a gate electrode placed on said gate oxide film;
- silicide layers formed on said gate electrode and in surface regions of said diffusion regions;
- a second silicon oxide film that excessively contains silicon so as to cover said first silicon oxide film, said diffusion regions, said gate oxide film, said gate electrode and said silicide layers;
- a diamond-like carbon layer formed on said second silicon oxide film and forming a water impermeable barrier over said gate oxide film;
- a third silicon oxide film that excessively contains silicon and which is formed on said diamond-like carbon layer;
- and
- a fourth silicon oxide film formed on said third silicon oxide film.
7 more elements
A semiconductor device having an interlayer insulating film over a silicon substrate comprising a gate layer and a gate oxide film, wherein said interlayer insulating film comprises:
- a diamond-like carbon layer forming a water impermeable barrier over said gate oxide film;
- a first silicon oxide film provided on one side of said diamond-like carbon layer;
- a second silicon oxide film formed on another side of said diamond-like carbon layer;
- a third silicon oxide film formed on said second silicon oxide film;
- wherein the semiconductor device further comprises;
- a first wiring layer provided under said first silicon oxide film;
- and a second wiring layer provided on said third silicon oxide film and electrically connected to said first wiring layer;
- said diamond-like carbon layer being placed between said first wiring layer and said second wiring layer.
5 more elements
A semiconductor device having a silicon substrate, comprising:
- first silicon oxide films on said silicon substrate to electically separate said device film another device;
- a pair of diffusion regions in said silicon substrate between said first silicon oxide films and which serve as source and drain regions;
- a gate oxide film formed between said diffusion regions and on said silicon substrate;
- a gate electrode placed on said gate oxide film;
- a second silicon oxide film containing excessive silicon and covering said first silicon oxide film, said diffusion regions, said gate oxide film and said gate electrode;
- a diamond like carbon layer formed on said second silicon oxide film and forming a water impermeable barrier over said gate oxide film;
- a third silicon oxide film formed on said diamond-like carbon layer;
- and
- a fourth silicon oxide film formed on said third silicon oxide film.
6 more elements
A semiconductor device having a silicon substrate, comprising:
- first silicon oxide films on said silicon substrate to electrically separate said device from another device;
- a pair of diffusion regions in said silicon substrate between said first silicon oxide films and which serve as source and drain regions;
- a gate oxide film formed between said diffusion regions and on said silicon substrate;
- a gate electrode placed on said gate oxide film;
- a second silicon oxide film covering said first silicon oxide film, said diffusion regions, said gate oxide film and said gate electrode;
- a diamond-like carbon layer formed on said second silicon oxide film and forming a water impermeable barrier over said gate oxide film;
- a third silicon oxide film containing excessive silicon and formed on said diamond-like carbon layer;
- and
- a fourth silicon oxide film formed on said third silicon oxide film.
6 more elements
A semiconductor device having a substantially dry gate oxide film comprising:
- a silicon substrate;
- first silicon oxide films on said silicon substrate to electrically separate said device from another device;
- a pair of diffusion regions in said silicon substrate between said first silicon oxide films to serve as source and drain regions;
- a gate oxide film formed between said diffusion regions and on said silicon substrate;
- a gate electrode on said gate oxide film;
- an interlayer insulating layer comprising:
- a diamond-like carbon layer on said first silicon oxide films, said gate electrode and said diffusion regions and forming a water impermeable barrier over said gate oxide film;
- and
- a second silicon oxide film formed on said diamond-like carbon layer.
6 more elements
Dependencies are inferred from the claim text.