Method for fabricating conductive components in microelectronic devices and substrate structures therefor

A microelectronic device, comprising:

• a substrate;
• a first dielectric layer positioned on the substrate, wherein the first dielectric layer comprises a first silicon nitride layer;
• a second dielectric layer on the first dielectric layer, the first and second dielectric layers being selectively removable from the substrate, wherein the second dielectric layer comprises a first silicon oxide layer;
• a third dielectric layer on the second dielectric layer, the second and third dielectric layers having a first pattern of conductive components formed therein, wherein the third dielectric layer comprises a second silicon nitride layer;
• a fourth dielectric layer over the third dielectric layer, the third and fourth dielectric layers being selectively etchable from one another, wherein the fourth dielectric layer comprises a second silicon oxide layer;
• a fifth dielectric layer over the fourth dielectric layer, the fourth and fifth dielectric layers having a second conductive component positioned therein, wherein the fifth dielectric layer comprises a third silicon nitride layer;
• the first conductive component is a first gold damascene line in the first silicon oxide layer and the second silicon nitride layer extending along a longitudinal direction on top of the first silicon nitride layer;
• and
• the second conductive component is a second gold damascene line in the second silicon oxide layer and the third silicon nitride layer extending along the longitudinal direction on top of the second silicon nitride layer.

A microelectronic device, comprising:

• a substrate;
• a first dielectric layer positioned on the substrate, wherein the first dielectric layer comprises a first silicon nitride layer;
• a second dielectric layer on the first dielectric layer, the first and second dielectric layers being selectively removable from the substrate, wherein the second dielectric layer comprises a first silicon oxide layer;
• a third dielectric layer on the second dielectric layer, the second and third dielectric layers having a first pattern of conductive components formed therein, wherein the third dielectric layer comprises a second silicon nitride layer;
• a fourth dielectric layer over the third dielectric layer, wherein the fourth dielectric layer comprises a third silicon nitride layer;
• a fifth dielectric layer over the fourth dielectric layer, the fourth and fifth dielectric layers being selectively etchable from one another, wherein the fifth dielectric layer comprises a second silicon oxide layer;
• and
• a sixth dielectric layer over the fifth dielectric layer, the fifth and sixth dielectric layers having a second conductive feature positioned in the fifth and sixth layers, wherein the sixth dielectric layer comprises a fourth silicon nitride layer.

A conductive component in a microelectronic device comprising:

• a first dielectric layer having a first thickness, the first dielectric layer being positioned on a substrate, wherein the first dielectric layer comprises a first silicon nitride layer;
• a second dielectric layer on the first dielectric layer, the first and second dielectric layers being selectively etchable with respect to each other, wherein the second dielectric layer comprises a first silicon oxide layer;
• and
• a third dielectric layer on the second dielectric layer, the second and third dielectric layers having a plurality of conductive components corresponding to a desired pattern of conductive components, wherein the third dielectric layer comprises a second silicon nitride layer, and wherein the conductive components comprise gold damascene lines in the silicon oxide layer and the second silicon nitride layer.

A conductive component iii a microelectronic device comprising:

• a first dielectric layer having a first thickness, the first dielectric layer being positioned on a substrate, wherein the first dielectric layer comprises a first silicon nitride layer;
• a second dielectric layer on the first dielectric layer, the first and second dielectric layers being selectively etchable with respect to each other, wherein the second dielectric layer comprises a first silicon oxide layer;
• a third dielectric layer on the second dielectric layer, the second and third dielectric layers having a plurality of conductive components corresponding to a desired pattern of conductive components, wherein the third dielectric layer comprises a second silicon nitride layer;
• a fourth dielectric layer over the third dielectric layer, the third and fourth dielectric layers being selectively etchable from one another, wherein the fourth dielectric layer comprises a second silicon oxide layer;
• a fifth dielectric layer over the fourth dielectric layer, the fourth and fifth dielectric layers having a plurality of second conductive components corresponding to a desired pattern of second conductive components positioned therein, wherein the fifth dielectric layer comprises a third silicon nitride layer;
• wherein the first conductive components comprise first gold damascene lines in the first silicon oxide layer and the second silicon nitride layer extending along a longitudinal direction on top of the first silicon nitride layer;
• and
• wherein the second conductive components comprise second gold damascene lines in the second silicon oxide layer and the third silicon nitride layer extending along the longitudinal direction.

A conductive component in a microelectronic device comprising:

• a first dielectric layer having a first thickness, the first dielectric layer being positioned on a substrate, wherein the first dielectric layer comprises a first silicon nitride layer;
• a second dielectric layer on the first dielectric layer, the first and second dielectric layers being selectively etchable with respect to each other, wherein the second dielectric layer comprises a first silicon oxide layer;
• a third dielectric layer on the second dielectric layer, the second and third dielectric layers having a plurality of conductive components corresponding to a desired pattern of conductive components, wherein the third dielectric layer comprises a second silicon nitride layer;
• a fourth dielectric layer over the third dielectric layer, wherein the fourth dielectric layer comprises a third silicon nitride layer;
• a fifth dielectric layer over the fourth dielectric layer, the fourth and fifth dielectric layers being selectively etchable from one another, wherein the fifth dielectric layer comprises a second silicon oxide layer;
• and
• a sixth dielectric layer over the fifth dielectric layer, the fifth and sixth dielectric layers having a plurality of second conductive components corresponding to a desired pattern of conductive components positioned therein, wherein the sixth dielectric layer comprises a fourth silicon nitride layer.