Process for manufacture of trench DRAM capacitor buried plates
AssigneeInternational Business Machines Corporation
InventorsUlrike Gruening, Carl J. Radens, Dirk Tobben
Life of this patent
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Abstract
A process for manufacturing a deep trench capacitor in a trench. The capacitor comprises a collar in an upper region of the trench and a buried plate in a lower region of the trench. The improvement comprises, before forming the collar in the trench upper region, filling the trench lower region with a non-photosensitive underfill material such as spin-on-glass. The process may comprise the steps of (a) forming a deep trench in a substrate; (b) filling the trench lower region with an underfill material; (c) forming a collar in the trench upper region; (d) removing the underfill; and (e) forming a buried plate in the trench lower region.
Claims19
A process for manufacturing a deep trench capacitor in a deep trench wherein the capacitor comprises a collar in an upper region of said trench and a buried plate in a lower region of said trench, the process comprising the steps of:
- (a) forming said deep trench in a substrate;
- (b) filling the trench lower region with a non-photosensitive, spin-on-glass, underfill material;
- (c) forming said collar in the trench upper region;
- (d) removing said underfill;
- and
- (e) forming said buried plate in said lower region,
- wherein the recited steps are performed sequentially in an order (a), (b), (c), (d), (e).
A process for manufacturing a deep trench capacitor in a deep trench wherein the capacitor comprises a collar in an upper region of said trench and a buried plate in a lower region of said trench, the process comprising the steps of:
- (a) forming said deep trench in a substrate;
- (b) filling the trench lower region with a non-photosensitive, spin-on-glass, underfill material;
- (c) removing said underfill;
- (d) forming said collar in the trench upper region;
- and
- (e) forming said buried plate in said lower region,
- wherein the recited steps are performed sequentially in an order (a), (b), (c), (d), (e).
A process for manufacturing a deep trench capacitor, the process comprising sequentially performing the steps of:
- (a) forming a pad film layer over a substrate;
- (b) forming a deep trench through said pad film layer and into said substrate, said trench having side walls, a bottom, an upper region, and a lower region;
- (c) filling the trench lower region with spin-on-glass underfill;
- (d) conformally depositing a dielectric material over said pad film, said trench side walls, and said spin-on-glass underfill;
- (e) etching said dielectric material over said pad film and said spin-on-glass underfill, leaving a collar of dielectric material on the trench side walls in the trench upper region;
- (f) removing said spin-on-glass underfill;
- and
- (g) forming a buried plate in said lower region.
A process for manufacturing a deep trench capacitor, the process comprising sequentially performing the steps of:
- (a) forming a pad film layer over a substrate;
- (b) forming a deep trench through said pad film layer and into said substrate, said trench having side walls, a bottom, an upper region, and a lower region;
- (c) forming a barrier film over said substrate, said trench side walls, and said trench bottom;
- (d) filling the trench lower region with spin-on-glass underfill;
- (e) etching the barrier film from said trench side walls in said upper region;
- (f) removing said spin-on-glass underfill;
- (g) thermally oxidizing said trench side walls in said upper region to grow a collar;
- and
- (h) forming a buried plate in said lower region.
Dependencies are inferred from the claim text.