Chemical mechanical polish (CMP) planarizing method with enhanced chemical mechanical polish (CMP) planarized layer planarity

A chemical mechanical polish (CMP) planarizing method for forming a chemical mechanical polish (CMP) planarized microelectronic layer within a microelectronic fabrication comprising:

• providing a substrate;
• forming over the substrate a microelectronic layer;
• wherein the microelectronic layer, when formed over the substrate, is formed with a thickness variation which compensates for a chemical mechanical polish (CMP) rate non-uniformity of a chemical mechanical polish (CMP) planarizing method, and wherein the microelectronic layer has a greater thickness at the center of the substrate than at an edge of the substrate;
• planarizing, while employing the chemical mechanical polish (CMP) planarizing method having the chemical mechanical polish (CMP) rate non-uniformity, the microelectronic layer to form a chemical polish (CMP) planarized microelectronic layer.

A chemical mechanical polish (CMP) planarizing method for forming a chemical mechanical polish (CMP) planarized microelectronic dielectric layer within a microelectronic fabrication comprising:

• providing a substrate;
• forming over the substrate a microelectronic dielectric layer;
• wherein the microelectronic dielectric layer, when formed over the substrate, is formed with a thickness variation which compensates for a chemical mechanical polish (CMP) rate non-uniformity of a chemical mechanical polish (CMP) planarizing method, and wherein the microelectronic dielectric layer has a greater thickness at an edge of the substrate than at the center of the substrate;
• planarizing, while employing the chemical mechanical polish (CMP) planarizing method having the chemical mechanical polish (CMP) rate non-uniformity, the microelectronic dielectric layer to form a chemical mechanical polish (CMP) planarized microelectronic dielectric layer.

A chemical mechanical polish (CMP) planarizing method for forming a chemical mechanical polish (CMP) planarized microelectronic dielectric layer within a microelectronic fabrication comprising:

• providing a substrate;
• forming over the substrate a microelectronic dielectric layer;
• wherein the microelectronic dielectric layer, when formed over the substrate, is formed with a thickness variation which compensates for a chemical mechanical polish (CMP) rate non-uniformity of a chemical mechanical polish (CMP) planarizing method, and wherein the microelectronic dielectric layer has a greater thickness at the center of the substrate than at an edge of the substrate;
• planarizing, while employing the chemical mechanical polish (CMP) planarizing method having the chemical mechanical polish (CMP) rate non-uniformity, the microelectronic dielectric layer to form a chemical mechanical polish (CMP) planarized microelectronic dielectric layer.