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AssigneeAdvanced Micro Devices, Inc.
InventorsRichard J. Huang, Robin W. Cheung
Estimating the term…
A rapid thermal anneal (>600° C.) in a nitrogen-containing atmosphere is used to form a barrier TiN layer at the bottom of contact openings. To form source and drain contacts, contact openings are etched in a dielectric down to a titanium silicide layer on top of doped regions in the semiconductor (i.e. polysilicon or doped regions in the semiconductor substrate). The barrier TiN layer on the bottom of the contact openings is provided by a rapid thermal anneal in a nitrogen-containing atmosphere which converts the top part of the titanium silicide layer in the contact openings into a barrier TiN layer. This nitrogen-containing atmosphere contains nitrogen-containing species (e.g., N2, NH3, N2O) that react with titanium silicide to form TiN under the conditions provided by the rapid thermal anneal.
A process of forming a barrier titanium nitride layer in contact openings etched in a dielectric layer supported over a semiconductor substrate, said process comprising:
A process of forming a barrier titanium nitride layer in contact openings etched in a dielectric layer supported over a semiconductor substrate, each of said contact openings having a bottom, said process comprising:
Dependencies are inferred from the claim text.