Method of applying partial reverse mask
AssigneeUnited Microelectronics Corp.
InventorsJuan-Yuan Wu, Water Lur
Life of this patent
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Abstract
A method is described. A substrate is provided. A first conductive layer with a first width and a second conductive layer with a second width are formed on the substrate. Photolithography and etching processes are performed on the dielectric layer to at least expose a first region of the first conductive layer and a second region of the second conductive layer. An oxide layer is then formed over the dielectric layer and the exposed first and second conductive layers. The method of applying partial reverse mask is able to resolve the adhesion problem of the dielectric layer with low dielectric constant.
Claims21
A method of applying a partial reverse mask, comprising the steps of:
- providing a substrate;
- forming a plurality of first conductive layers with a first width and a plurality of second conductive layers with a second width on the substrate, wherein the first width is greater than the second width;
- forming a dielectric layer over the first conductive layers and second conductive layers;
- patterning the dielectric layer to at least expose a first region of the first conductive layers and a second region of the second conductive layers;
- and
- forming an oxide layer over the exposed first region of the first conductive layers and the exposed second region of the second conductive layers.
A method of applying a partial reverse mask, comprising the steps of:
- providing a substrate;
- forming a first conductive layer with a first width and a second conductive layer with a second width on the substrate by using a first mask having a first pattern with the first width and a second pattern with the second width, wherein the first width is greater than the second width;
- forming a dielectric layer over the first and second conductive layers;
- forming a plurality of openings in the dielectric layer exposing a position corresponding to the first and second conductive layers by using a second mask having a third pattern with a third width and a fourth pattern with a fourth width, wherein the third width has a value obtained by deducting a bias from the first width and the fourth width has a value obtained by deducting the bias from the second width;
- and
- forming an oxide layer over the dielectric layer and the exposed first and second conductive layers.
A method of applying a partial reverse mask, comprising the steps of:
- providing a substrate;
- forming a first conductive layer with a first width and a second conductive layer with a second width on the substrate by using a first mask having a first pattern with the first width and a second pattern with the second width;
- forming a dielectric layer on the first and second conductive layer;
- forming an opening in the dielectric layer exposing the position corresponding to the first conductive layer by reversing the first mask to form a second mask, the second mask having a third pattern with a third width, wherein the third width has a value obtained from the first width, after deducing a M and a S value from the first width, wherein the M value is about half of the value of the first width and the S value is a bias or deviation value of the metal width;
- and
- forming an oxide layer over the dielectric layer and the exposed first conductive layer.
Dependencies are inferred from the claim text.