Method of forming a contact in semiconductor device

Abstract

The present invention relates to a method of forming a contact in semiconductor device, more particularly, to a method of forming a borderless contact in semiconductor device which minimizes loss of field oxide on forming a contact hole, reducing leakage current at an interface between an active area and a field area and preventing another loss of silicon and silicide in the active area by forming a barrier layer on a field oxide layer for separating devices in order to enhance a process margin of forming the contact hole in the active area due to a reduced design rule and an increased device integrity. The present invention includes the steps of forming a trench on a semiconductor substrate wherein the trench defines an active area and a field area, filling up the trench with an insulating layer, forming a barrier layer just on the insulating layer, forming a transistor in the active layer wherein the transistor has an impurity diffusion region, forming an insulating interlayer on a surface of the substrate including the transistor and the barrier layer, and forming at least a contact hole by removing a predetermined portion of the insulating interlayer wherein the contact hole exposes both a portion of the impurity diffusion region and another portion of the barrier layer.

Dependencies are inferred from the claim text.