Method for preventing the cluster defect of HSG

A method for improving quality of capacitor by heating HSG before formation of dielectric layer of capacitor, said method comprising:

• providing a substrate;
• forming a first dielectric layer on said substrate;
• patterning said first dielectric layer and forming a plurality of gaps inside said first dielectric layer, each of said gaps directly contacting with said substrate;
• forming a polysilicon layer on said first dielectric layer and completely filling said gaps;
• patterning said polysilicon layer and forming a plurality of paddle-like polysilicon structures, each of said paddle-like polysilicon structures completely filling one of said gaps;
• forming a plurality of HSGs on surface of said paddle-like polysilicon structures;
• treating said paddle-like polysilicon structures and said HSGs by heat treatment, wherein temperature of said heat treatment is larger than about 250° C.;
• cleaning surface of said HSGs and said first dielectric layer;
• forming a second dielectric layer on said first dielectric layer, said second dielectric layer completely covering said paddle-like polysilicon structures;
• and
• forming a conductive layer on said second dielectric layer.

A method capable of preventing the cluster defect of HSG by heat treatment, said method comprising:

• providing a substrate, said substrate comprising a plurality of elements such as source, drain and well;
• forming a dielectric layer on said substrate;
• patterning said dielectric layer and forming a plurality of gaps inside said dielectric layer, each of said gaps directly contacts with said substrate;
• forming a conductive layer on said dielectric layer and completely filling said gaps;
• patterning said conductive layer and forming a plurality of conductive structures, each of said conductive structures completely filling one of said gaps;
• forming a plurality of HSGs on surface of said conductive structures;
• treating said conductive structures and said HSGs by a heat treatment, where typical temperature of said heat treatment is about larger than 250° C.;
• and
• cleaning surface of said HSGs and said dielectric layer.