Method for forming a bottom electrode of a storage capacitor
AssigneeNEC Corporation
InventorIchiro Yamamoto
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Abstract
The present invention provides a method of forming an electrode, comprising the steps of: forming a dummy electrode having an uneven side face; forming a template insulating film which completely buries the dummy electrode; removing the dummy electrode with leaving the template insulating film so as to form a hole in the template insulating film, wherein a shape of the uneven side face of the dummy electrode as removed is transferred to an inside wall of the hole; filling a metal film into the hole of the template insulating film, wherein the shape of the uneven inside wall of the hole is transferred to a side face of the metal film; and removing the template insulating film to form a metal electrode with an uneven side face.
Claims10
A method of forming an electrode, comprising the steps of:
- forming a dummy electrode having an uneven side face;
- forming a template insulating film which completely buries the dummy electrode;
- removing said dummy electrode with leaving said template insulating film so as to form a hole in said template insulating film, wherein a shape of the uneven side face of the dummy electrode as removed is transferred to an inside wall of the hole;
- filling a metal film into said hole of said template insulating film, wherein the shape of the uneven inside wall of said hole is transferred to a side face of the metal film;
- and
- removing said template insulating film to form a metal electrode with an uneven side face.
Dependencies are inferred from the claim text.