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US 6,271,073 B1Granted
Method of forming transistors in a peripheral circuit of a semiconductor memory device
AssigneeMicron Technology, Inc.
InventorCeredig Roberts
Life of this patent
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Abstract
A method of forming a transistor in a peripheral circuit of a random access memory device wherein a transistor gate, capacitor electrode or other component in the memory cell array is formed simultaneously with the formation of a transistor gate in the periphery.
Claims1
A method of forming a transistor in a peripheral circuit of a dynamic random access memory device (DRAM), comprising the steps of:
- forming a first polysilicon layer over a substrate in an array region and in a peripheral region of the DRAM;
- removing a portion of the first polysilicon layer in the array region to at least partially define a transistor gate in the array region;
- after forming the transistor gate in the array region, forming a second polysilicon layer over the first polysilicon layer;
- and
- patterning the second polysilicon layer in the peripheral region and in the array region to form a periphery transistor gate in the peripheral region and a capacitor bottom electrode in the array region, the patterning performed through the use of a single mask step.
2 more elements
Dependencies are inferred from the claim text.