Fabrication process for reduced area storage node junction

A process for making a semiconductor device having a junction between a polysilicon conductor and a substrate, the process comprising the steps of:

• a. forming on the substrate an active area at least partially bounded by an isolation structure;
• b. defining a contact region in the active area;
• c. defining a first segment of the contact region and forming diffusion barrier over the first segment of the contact region;
• d. defining a second segment of the contact region between the first segment and the isolation structure to electrically isolate the first segment from the isolation structure;
• and
• e. forming a polysilicon conductor having a generally horizontal portion over both segments of the contact region, the generally horizontal portion of the polysilicon conductor in electrical contact with the first segment of the contact region and electrically isolated from the second segment.

A process for making a semiconductor device, comprising:

• a. forming on a substrate an active area at least partially bounded by an isolation structure;
• b. defining a contact region in the active area along a surface of the substrate adjacent to the isolation structure;
• c. defining a first segment of the contact region and forming diffusion barrier over the first segment of the contact region;
• d. defining a second segment of the contact region between the first segment and the isolation structure to electrically isolate the first segment from the isolation structure;
• and
• e. forming a conductive element having a generally horizontal portion over both segments of the contact region, the generally horizontal portion of the conductive element in electrical contact with the first segment of the contact region and electrically isolated from the second segment.

A process for making a semiconductor device having a junction between a polysilicon conductor and a substrate, the process comprising the steps of:

• a. forming on the substrate an active area at least partially bounded by an isolation structure;
• b. defining a contact region in the active area along a surface of the substrate adjacent to the isolation structure;
• c. defining a first segment of the contact region and forming diffusion barrier over the first segment of the contact region;
• d. defining a second segment of the contact region between the first segment and the isolation structure to electrically isolate the first segment from the isolation structure;
• and
• e. forming a polysilicon conductor having a generally horizontal portion over both segments of the contact region, the generally horizontal portion of the polysilicon conductor in electrical contact with the first segment of the contact region and electrically isolated from the second segment.