Semiconductor material and method for forming the same and thin film transistor

A method of manufacturing an insulated gate field effect transistor comprising the steps of:

• forming on a surface a semiconductor film containing therein carbon, nitrogen and oxygen at a concentration of 5×1019 atoms/cm3 or less respectively;
• forming a protective film comprising a material selected from the group consisting of silicon oxide, silicon nitride, silicon carbide and silicon nitride oxide on said semiconductor film;
• and
• irradiating said semiconductor film with a pulsed laser light through said protective film to crystallize said semiconductor film without melting,
• wherein at least a channel forming region of said semiconductor film is irradiated with said pulsed laser light during said irradiating step, and
• wherein the crystallized semiconductor film shows a Raman shift at a wave number of 517 cm−1 or less.

A method of manufacturing an insulated gate field effect thin film transistor comprising the steps of:

• forming a non-single crystalline semiconductor layer on an insulating surface of a substrate;
• irradiating said non-single crystalline semiconductor layer with a pulsed laser light to crystallize said semiconductor layer without melting said non-single crystalline semiconductor layer;
• and then
• forming a channel region of said transistor within the crystallized semiconductor layer after the irradiating step,
• wherein said non-single crystalline semiconductor layer contains carbon, nitrogen and oxygen at a concentration of 5×1019 atoms/cm3 or less respectively,
• wherein at least said channel region of said transistor is irradiated with said pulsed laser light during said irradiating step, and
• wherein the crystallized semiconductor layer shows a Raman shift at a wave number of 517 cm−1 or less.

A method for forming a semiconductor device comprising the steps of:

• forming a semiconductor layer comprising silicon on an insulating surface, said semiconductor layer containing therein carbon, nitrogen and oxygen at a concentration of 5×1019 atoms/cm3 or less respectively;
• and
• crystallizing said semiconductor layer by irradiating a pulsed laser light to said semiconductor layer, said semiconductor layer being maintained in a solid-state during the crystallizing step;
• wherein at least a channel forming region of said semiconductor layer is irradiated with said pulsed laser light during said crystallizing step, and
• wherein a full band width at half maximum (FWHM) of a Raman peak of the crystallized semiconductor layer is more than 10 cm−1.

A method for forming a semiconductor device comprising the steps of:

• forming a semiconductor layer comprising silicon on an insulating surface, said semiconductor layer containing therein carbon, nitrogen and oxygen at a concentration of 5×1019 atoms/cm3 or less respectively;
• forming a protective film comprising a material expressed by a formula SiNxOyCz where 0≦x≦4/3, 0≦y≦2, 0≦z≦1 and 0<3x+2y+4z≦4;
• and
• crystallizing said semiconductor layer by irradiating a pulsed laser light to said semiconductor layer, said semiconductor layer being maintained in a solid-state during the crystallizing step,
• wherein at least a channel forming region of said semiconductor layer is irradiated with said pulsed laser light during said crystallizing step,
• wherein a full band width at half maximum (FWHM) of a Raman peak of the crystallized semiconductor layer is more than 10 cm−1, and
• wherein threshold voltage of said semiconductor device is 5.0 V or less and drain current ratio thereof is 1×1016 or more.

A method for forming a semiconductor device comprising the steps of:

• forming a semiconductor layer comprising silicon on an insulating surface, said semiconductor layer containing therein carbon, nitrogen and oxygen at a concentration of 5×1019 atoms/cm3 or less respectively;
• crystallizing said semiconductor layer by irradiating a pulsed laser light to said semiconductor layer, said semiconductor layer being maintained in a solid-state during the crystallizing step;
• and
• heat treating the crystallized semiconductor layer in hydrogen atmosphere,
• wherein at least a channel forming region of said semiconductor layer is irradiated with said pulsed laser light during said crystallizing step;
• wherein the crystallized semiconductor layer shows a Raman shift at a wave number of 517 cm−1 or less, and
• wherein threshold voltage of said semiconductor device is 5.0 V or less and drain current ratio thereof is 1×1016 or more.

A method of manufacturing an insulated gate field effect thin film transistor comprising the steps of:

• forming a semiconductor layer on an insulating surface of a substrate;
• irradiating said semiconductor layer with a pulsed laser light to crystallize said semiconductor layer without melting said semiconductor layer;
• and then
• forming a channel region of said transistor within the crystallized semiconductor layer after the irradiating step,
• wherein said semiconductor layer contains carbon, nitrogen and oxygen at a concentration of 5×1019 atoms/cm3 or less respectively,
• wherein at least said channel region of said transistor is irradiated with said pulsed laser light during said irradiating step, and
• wherein a full band width at half maximum (FWHM) of a Raman peak of the crystallized semiconductor layer is more than 10 cm−1.

A method of manufacturing an insulated gate field effect transistor comprising the following sequential steps of:

• forming a semiconductor layer on an insulating surface, said semiconductor layer containing carbon, nitrogen and oxygen at a concentration of 5×1019 atoms/cm3 or less respectively;
• irradiating said semiconductor layer with a pulsed laser light to crystallize said semiconductor layer;
• introducing a N or P-type conductivity impurity into said semiconductor layer to form source and drain regions;
• and
• annealing at least said source and drain regions in the crystallized semiconductor layer without melting the crystallized semiconductor layer,
• wherein at least said channel region of said semiconductor layer is irradiated with said pulsed laser light during said irradiating step;
• wherein a full band width at half maximum (FWHM) of a Raman peak of the crystallized semiconductor layer is more than 10 cm−1.

A method of manufacturing an insulated gate field effect transistor comprising the following sequential steps of:

• forming a semiconductor layer on an insulating surface, said semiconductor layer containing carbon, nitrogen and oxygen at a concentration of 5×1019 atoms/cm3 or less respectively;
• irradiating said semiconductor layer with a pulsed laser light to crystallize said semiconductor layer;
• forming a protective layer comprising a material expressed by a formula SiNxOyCz where 0≦x≦4/3, 0≦y≦2, 0≦z≦1 and 0<3x+2y+4z≦4,
• introducing a N or P-type conductivity impurity into said semiconductor layer to form source and drain regions;
• and
• annealing at least said source and drain regions in the crystallized semiconductor layer without melting the crystallized semiconductor layer,
• wherein at least said channel region of said semiconductor layer is irradiated with said pulsed laser light during said irradiating step, and
• wherein a full band width at half maximum (FWHM) of a Raman peak of the crystallized semiconductor layer is more than 10 cm−1.

A method of manufacturing an insulated gate field effect transistor comprising the following sequential steps of:

• forming a semiconductor layer on an insulating surface, said semiconductor layer containing carbon, nitrogen and oxygen at a concentration of 5×1019 atoms/cm3 or less respectively;
• irradiating said semiconductor layer with a pulsed laser light to crystallize said semiconductor layer;
• introducing a N or P-type conductivity impurity into said semiconductor layer to form source and drain regions;
• and
• annealing at least said source and drain regions in the crystallized semiconductor layer without melting the crystallized semiconductor layer,
• heat treating the crystallized semiconductor layer in a hydrogen atmosphere,
• wherein at least a channel forming region of said semiconductor layer is irradiated with said pulsed laser light during said crystallizing step, and
• wherein the crystallized semiconductor layer shows a Raman shift at a wave number of 517 cm−1 or less.