Thin film transistor and method of manufacturing the same

A method of manufacturing a thin film transistor comprising the steps of:

• successively forming a conductive layer and a first insulating layer on a surface substrate;
• patterning said first insulating layer to thereby form a first insulating layer pattern having a predetermined width;
• forming a second insulating layer on the surface of said conductive layer and said first insulating layer pattern;
• etching said second insulating layer to thereby form sidewall spacers on opposing sidewalls of said first insulating layer pattern
• etching said conductive layer using said patterned first insulating layer and said sidewall spacers as an etch mask, to thereby form a conductor pattern serving as a gate electrode;
• removing said sidewall spacers and growing third and fourth insulating films on respective portions of said gate electrode;
• removing said third insulating film overlying a first side portion of said gate electrode;
• forming a fifth insulating layer on a surface of said gate electrode and a remaining portion of said fourth insulating film;
• forming an active region on the surface of said substrate and said fifth insulating layer, forming an impurity-doped layer on said active region;
• etching back said impurity-doped layer until a surface of said fourth insulating film and said active region disposed between said first and second side portions of said gate electrode are exposed;
• and
• diffusing said impurity from said impurity-doped layer into said active region, to thereby form a source and a drain.