Modified material deposition sequence for reduced detect densities in semiconductor manufacturing

Abstract

A method and apparatus for forming high-quality deposited material layers in semiconductor manufacturing are provided. In the method, the initial stages of a deposition are performed with no current flowing through substrate heater filaments. Current is restored to the heater filaments when needed to maintain the substrate within an acceptable range around a target or setpoint temperature. When an on/off temperature controller is used, the method may be implemented without disturbing the normal operation of the controller, by monitoring the heater filament current and beginning a deposition just after the current has been turned off by the controller. Current may also be removed from the heater filaments at the end of the deposition, so that concentrations of deposition species may equilibrate without the presence of heater currents. Performing as much of the deposition as possible with the substrate heater current off is believed to reduce defect formation which may be associated with magnetic fields and outgassing resulting from heater filament operation. A substrate heater design is provided in which heater filaments are eliminated and the substrate is heated using a heated, circulating fluid.

Dependencies are inferred from the claim text.