Electronic display device having an active matrix display panel

An electronic device having at least one active matrix display panel, said panel comprising:

• a transparent substrate having at least one pixel;
• a first thin film transistor and a second thin film transistor disposed in said at least one pixel;
• a first interlayer insulating film covering said first and second thin film transistors;
• a photoelectric conversion element formed on said first interlayer insulating film and electrically connected to said first thin film transistor through said first interlayer insulating film wherein said photoelectric conversion element comprises a first transparent electrode formed on said first interlayer insulating film, a photosensitive semiconductor film formed on the first transparent electrode, and a second light reflective electrode formed on the photosensitive semiconductor film;
• a second interlayer insulating film formed over said first interlayer insulating film and said photoelectric conversion element;
• and
• a light reflective pixel electrode formed on said second interlayer insulating film and electrically connected to said second thin film transistor.

An electronic device having at least one active matrix display panel, said panel comprising:

• a transparent substrate having at least one pixel;
• a first thin film transistor and a second thin film transistor disposed in said at least one pixel wherein light shielding films are disposed between said transparent substrate and said first and second thin film transistors;
• a first interlayer insulating film covering said first and second thin film transistors;
• a photoelectric conversion element formed on said first interlayer insulating film and electrically connected to said first thin film transistor through said first interlayer insulating film wherein said photoelectric conversion element comprises a first transparent electrode formed on said first interlayer insulating film, a photosensitive semiconductor film formed on the first transparent electrode, and a second light reflective electrode formed on the photosensitive semiconductor film;
• a second interlayer insulating film formed over said first interlayer insulating film and said photoelectric conversion element;
• and
• a light reflective pixel electrode formed on said second interlayer insulating film and electrically connected to said second thin film transistor.

An electronic device having at least one active matrix display panel, said panel comprising:

• a transparent substrate having at least one pixel;
• a first thin film transistor and a second thin film transistor disposed in said at least one pixel;
• a first interlayer insulating film covering said first and second thin film transistors;
• a photoelectric conversion element formed on said first interlayer insulating film and electrically connected to said first thin film transistor through said first interlayer insulating film wherein said photoelectric conversion element comprises a first transparent electrode formed on said first interlayer insulating film, a photosensitive semiconductor film formed on the first transparent electrode, and a second light reflective electrode formed on the photosensitive semiconductor film;
• a second interlayer insulating film comprising an organic resin film formed over said first interlayer insulating film and said photoelectric conversion element wherein said second interlayer insulating film has a leveled upper surface;
• and
• a light reflective pixel electrode formed on said second interlayer insulating film and electrically connected to said second thin film transistor.

An electronic device having at least one active matrix display panel, said panel comprising:

• a transparent substrate having at least one pixel;
• a first thin film transistor and a second thin film transistor disposed in said at least one pixel;
• a first interlayer insulating film covering said first and second thin film transistors wherein said first interlayer insulating film comprises an organic resin film to provide a leveled upper surface thereon;
• a photoelectric conversion element formed on said first interlayer insulating film and electrically connected to said first thin film transistor through said first interlayer insulating film wherein said photoelectric conversion element comprises a first transparent electrode formed on said first interlayer insulating film, a photosensitive semiconductor film formed on the first transparent electrode, and a second light reflective electrode formed on the photosensitive semiconductor film;
• a second interlayer insulating film formed over said first interlayer insulating film and said photoelectric conversion element;
• and
• a light reflective pixel electrode formed on said second interlayer insulating film and electrically connected to said second thin film transistor.

An electronic device having at least one active matrix display panel, said panel comprising:

• a substrate having at least one pixel;
• a first thin film transistor and a second thin film transistor disposed in said at least one pixel;
• a first interlayer insulating film covering said first and second thin film transistors;
• a photoelectric conversion element formed on said first interlayer insulating film and electrically connected to said first thin film transistor through said first interlayer insulating film wherein said photoelectric conversion element comprises a first electrode formed on said first interlayer insulating film, a photosensitive semiconductor film formed on the first electrode, and a second electrode formed on the photosensitive semiconductor film;
• a second interlayer insulating film formed over said first interlayer insulating film and said photoelectric conversion element;
• and
• a pixel electrode formed on said second interlayer insulating film and electrically connected to said second thin film transistor.

An electronic device having at least one active matrix display panel, said panel comprising:

• a substrate having at least one pixel;
• a first thin film transistor and a second thin film transistor disposed in said at least one pixel;
• a first interlayer insulating film covering said first and second thin film transistors;
• a photoelectric conversion element formed on said first interlayer insulating film and electrically connected to said first thin film transistor through said first interlayer insulating film wherein said photoelectric conversion element comprises a first electrode formed on said first interlayer insulating film, a photosensitive semiconductor film formed on the first electrode, and a second electrode formed on the photosensitive semiconductor film;
• a second interlayer insulating film comprising an organic resin film formed over said first interlayer insulating film and said photoelectric conversion element wherein said second interlayer insulating film has a leveled upper surface;
• and
• a pixel electrode formed on said second interlayer insulating film and electrically connected to said second thin film transistor.

An electronic device having at least one active matrix display panel, said panel comprising:

• a transparent substrate having at least one pixel;
• a first thin film transistor and a second thin film transistor disposed in said at least one pixel;
• a photoelectric conversion element formed over said substrate and electrically connected to said first thin film transistor wherein said photoelectric conversion element comprises a first transparent electrode, a photosensitive semiconductor film formed on the first transparent electrode, and a second light reflective electrode formed on the photosensitive semiconductor film so that light entered through said transparent substrate is received by said photoelectric conversion element;
• an interlayer insulating film formed over said photoelectric conversion element, and said first and second thin film transistors;
• and
• a light reflective pixel electrode formed on said interlayer insulating film and electrically connected to said second thin film transistor.