US 6,232,042 B1Granted

Method for manufacturing an integral thin-film metal resistor

AssigneeMotorola, Inc.

InventorsGregory J. Dunn, Jovica Savic, Allyson Beuhler

Life of this patent

Estimating the term…

Loading patent…

Abstract

A method for manufacturing a microelectronic assembly to have a resistor, and particularly a metal resistive film, with desirable processing and dimensional characteristics. The method generally entails applying a photosensitive dielectric to a substrate to form a dielectric layer. The dielectric layer is photoimaged to polymerize a first portion of the dielectric layer on a first region of the substrate, leaving the remainder of the dielectric layer unpolymerized. An electrically resistive film is then applied to the dielectric layer, and the dielectric layer is developed to remove concurrently the unpolymerized portion thereof and the portion of the resistive film overlying the unpolymerized portion, so that a portion of the resistive film remains over the second portion to form the resistor. An alternative process order is to apply the resistive film prior to exposing the dielectric layer to radiation, and then exposing the dielectric layer through the resistive film. The resistive film is preferably a multilayer film that includes an electrically resistive layer, such as NiP, NiCr or another nickel-containing alloy, and a sacrificial backing such as a layer of copper.

Claims11

Dependent claims

A method for manufacturing a microelectronic assembly having a resistor structure on a substrate having a first region and a second region, the method comprising the steps of:

applying a photosensitive dielectric to the substrate to form a first dielectric layer that covers the first region and the second region, the photosensitive dielectric being capable of a soluble state and an insoluble state;
exposing the first dielectric layer to electromagnetic radiation to produce the insoluble state for a first portion of the first dielectric layer on the first region and the soluble state for a second portion of the first dielectric layer on the second region;
laminating a multilayer film onto the first dielectric layer, said multilayer film comprising an electrically resistive layer and a carrier layer, said multilayer film being laminated such that the electrically resistive layer lies adjacent the dielectric layer and said carrier layer is exposed,
removing a portion of the carrier layer to expose the resistive layer overlying the second portion of the first dielectric layer;
and
developing the first dielectric layer to remove concurrently the second portion of the first dielectric layer and a portion of the electrically resistive layer overlying the second portion of the first dielectric layer so that a remnant portion of the electrically resistive layer remains over the first portion of the first dielectric layer.

3 more elements

Dependencies are inferred from the claim text.