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US 6,218,890 B1Granted
Switching circuit device and semiconductor device
AssigneeSanyo Electric Co., Ltd.
InventorsTsutomu Yamaguchi, Seiichi Banba, Tetsuro Sawai, Hisanori Uda
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Abstract
A switching circuit device including a multi-gate field effect transistor having a plurality of gate electrodes between a drain electrode and a source electrode, a low resistor having its one end connected between the gate electrodes, and a high resistor connected between the other end of the low resistor and any one of the drain electrode, the source electrode and the end of the other low resistor.
Claims20
A switching circuit device comprising a multi-gate field effect transistor, wherein
- said field effect transistor comprises:
- a first ohmic electrode;
- a second ohmic electrode;
- a plurality of gate electrodes;
- a low resistor having its one end connected between the adjacent gate electrodes out of said plurality of gate electrodes;
- and
- a high resistor coupled to said low resistor having a resistance value larger than the resistance value of said low resistor for changing an interstage potential between said adjacent gate electrodes into a predetermined potential through said low resistor.
4 more elements
A semiconductor device comprises:
- a semiconductor substrate;
- a first ohmic electrode formed on said semiconductor substrate;
- a second ohmic electrode formed on said semiconductor substrate;
- a first ion implantation area formed in said semiconductor substrate below said first ohmic electrode;
- a second ion implantation area formed in said semiconductor substrate below said second ohmic electrode;
- an active layer formed in said semiconductor substrate between said first ion implantation area and said second ion implantation area;
- a plurality of gate electrodes formed on said active layer;
- a low resistance area formed in said semiconductor substrate between the adjacent gate electrodes out of said plurality of gate electrodes;
- and
- a high resistance area formed in said semiconductor substrate beside said active layer and having a resistance value larger than the resistance value of said low resistance area for changing an interstage potential between said adjacent gate electrodes into a predetermined potential through said low resistance area.
7 more elements
Dependencies are inferred from the claim text.