Back to results
US 6,211,562 B1Granted
Homojunction semiconductor devices with low barrier tunnel oxide contacts
AssigneeMicron Technology, Inc.
InventorsLeonard Forbes, Kie Y. Ahn
Life of this patent
Estimating the term…
Abstract
A homojunction bipolar transistor with performance characteristics similar to more costly heterojunction or retrograde base transistors. The high emitter resistivity found in prior homojunction devices is circumvented using a low work function material layer in forming the emitter. This produces an economically viable high performance alternative to SiGe HBTs or SiGe retrograde base transistors.
Claims18
A semiconductor device, comprising:
- an isolating substrate;
- a collector layer of a first conduction type and of a semiconductor material on the isolating substrate;
- a base layer of the semiconductor material on the collector layer, the base layer of a second conduction type;
- an emitter layer of the semiconductor material on the base layer, the emitter layer of the first conduction type;
- an oxide layer of the semiconductor material on the emitter layer;
- and
- a low work function material layer on the oxide layer.
4 more elements
A semiconductor chip, comprising:
- a plurality of semiconductor devices wherein at least one semiconductor device comprising:
- an isolating substrate;
- a collector layer of a first conduction type and of a semiconductor material on the isolating substrate;
- a base layer of the semiconductor material on the collector layer, the base layer of a second conduction type;
- an emitter layer of the semiconductor material on the base layer, the emitter layer of the first conduction type;
- an oxide layer of the semiconductor material on the emitter layer;
- and
- a low work function material layer on the oxide layer.
5 more elements
A computer system, comprising:
- a memory device;
- and
- a central processing unit comprising:
- a plurality of semiconductor devices wherein at least one semiconductor device comprising:
- an isolating substrate;
- a collector layer of a first conduction type and of a semiconductor material on the isolating substrate;
- a base layer of the semiconductor material on the collector layer, the base layer of a second conduction type;
- an emitter layer of the semiconductor material on the base layer, the emitter layer of the first conduction type;
- an oxide layer of the semiconductor material on the emitter layer;
- and
- a low work function material layer on the oxide layer.
8 more elements
A computer system, comprising:
- a central processing unit;
- and
- a memory device comprising:
- a plurality of semiconductor devices wherein at least one semiconductor device comprising:
- an isolating substrate;
- a collector layer of a first conduction type and of a semiconductor material on the isolating substrate;
- a base layer of the semiconductor material on the collector layer, the base layer of a second conduction type;
- an emitter layer of the semiconductor material on the base layer, the emitter layer of the first conduction type;
- an oxide layer of the semiconductor material on the emitter layer;
- and
- a low work function material layer on the oxide layer.
8 more elements
A semiconductor contact, comprising:
- a layer of semiconductor material;
- an oxide layer of the semiconductor material on the semiconductor material;
- and
- a low work function material layer on the oxide layer.
1 more element
A homojunction bipolar transistor emitter comprising:
- a silicon layer;
- a silicon oxide layer on the silicon layer;
- and
- a low work function material layer on the silicon oxide layer.
1 more element
A semiconductor device, comprising:
- a collector layer of a first conduction type and of a semiconductor material;
- a base layer of the semiconductor material on the collector layer, the base layer of a second conduction type;
- an emitter layer of the semiconductor material on the base layer, the emitter layer of the first conduction type;
- an oxide layer on the emitter layer;
- and
- a low work function material layer on the oxide layer.
3 more elements
Dependencies are inferred from the claim text.