Semi-insulated indium phosphide based compositions
AssigneeLucent Technologies Inc.
InventorsWilbur Dexter Johnston, Jr., Judith Ann Long
Life of this patent
Estimating the term…
Abstract
It has been found that through the use of ferrocene or iron pentacarbonyl based compounds, it is possible to produce semi-insulating epitaxial layers of indium phosphide-based compounds by an MOCVD process. Resistivities up to 1×109 ohm-cm have been achieved as compared to resistivities on the order of 5×103 ohm-cm for other types of semi-insulating epitaxial indium phosphide.
Claims20
An optoelectronic device or a laser device, said device comprising a substrate, first and second active regions of said device, and a region of semi-insulating indium phosphide based material formed on said substrate and electrically isolating said first active region from said second active region wherein said region of semi-insulating indium phosphide based material is formed by the process that comprises the steps of contacting said substrate with a deposition gas stream characterized in that said substrate has a resistivity less than 103 ohm-cm, said semi-insulating region has a resistivity of at least 106 ohm-cm, said semi-insulating region is epitaxial to said substrate and said semi-insulating region is formed by introducing a dopant precursor comprising a composition chosen from the groups consisting of ferrocene based compositions and iron pentacarbonyl based compositions into said deposition gas stream wherein said deposition gas stream is produced by combining entities including an organo-indium compound and a source of phosphorus whereby current flow is confined to desired device paths.
Dependencies are inferred from the claim text.