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US 6,208,535 B1Granted
Resonant gate driver
AssigneeTexas Instruments Incorporated
InventorDavid B. Parks
Life of this patent
Estimating the term…
Abstract
A power supply (500) with vertical field effect transistor synchronous rectifiers (VFET1 and VFET2) having drivers (VFET Driver1 and VFET Driver2) which provide bipolar mode of operation by diode clamping an inductor overshoot which forwards biases the gate-source junction. The rectifiers have low on resistance useful in low output voltage power supplies.
Claims6
A driver, comprising:
- (a) first and second power supply inputs;
- (b) an output;
- (c) a first switch directly between said first power supply input and said output;
- (d) a second switch coupled between said second power supply input and a passive overshoot circuit, said overshoot circuit coupled to said output;
- and
- (e) a switch input coupled to said first and second switches.
3 more elements
A method of driving the gate of a field effect transistor, comprising the steps of:
- (a) providing first and second power supplies;
- (b) alternatively (i) coupling said first power supply directly to a gate of a field effect transistor and (ii) coupling said second power supply to said gate through a passive overshoot circuit;
- (c) whereby said first power supply may be at a voltage to turn off said field effect transistor.
Dependencies are inferred from the claim text.