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US 6,208,029 B1Granted
Integrated circuit device with reduced cross talk
AssigneeHyundai Electronics America
InventorsDerryl D. J. Allman, Kenneth P. Fuchs, Gayle W. Miller, Samuel C. Gioia
Life of this patent
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Abstract
A low dielectric material is applied, as by spinning on, over the passivation layer of a semiconductor chip to fill the gaps which may exist between the top layer metal lines, and thereby minimize the possibility of cross talk which might otherwise be present between those lines.
Claims8
An integrated circuit device comprising:
- a plurality of top layer metal interconnect lines;
- a passivation layer disposed over said top layer metal interconnect lines and having gaps which extend between said metal interconnect lines;
- low dielectric constant material disposed over said passivation layer and in said gaps to prevent the deposition of a high dielectric constant material in said gaps and to reduce crosstalk between said metal interconnect lines at high operating speeds of said integrated circuit;
- high dielectric constant material disposed over said low dielectric constant material;
- and
- wherein said low dielectric constant material has a thickness greater than 10 microns and less than about 20 microns so as to serve as a barrier to alpha particles during operation.
3 more elements
Dependencies are inferred from the claim text.