RC-networks in semiconductor devices and method therefor
AssigneeDigital Devices, Inc.
InventorsDmitri G. Kravtchenko, Vladimir A. Khrustalev
Life of this patent
Estimating the term…
Abstract
An improved RC network integrated circuit semiconductor device is disclosed which incorporates an improved method for fabrication. The new device and method includes the use of a tantalum nitride layer as the resistive material for the resistor and a protective metal layer formed between the resistive layer and a metal interconnect layer. The capacitor uses a metal electrode as one plate of the capacitor and a heavily doped semiconductor region as the other plate of the capacitor and separated from the one plate of the capacitor by a silicon nitride insulation layer.
Claims20
An integrated circuit semiconductor device comprising, in combination at least one capacitor device and at least one resistor device:
- a semiconductor substrate;
- a capacitor device having one electrode spaced from said substrate, a second electrode of said capacitor device comprises a heavily doped semiconductor region, said capacitor device having a dielectric layer located between said one electrode and second electrode;
- and
- a resistor device spaced further away from said substrate than said capacitor device, said resistor device comprising a layer portion of resistive material, protective metal layer portions located on exposed surface portions of said layer of resistive material and spaced apart metal contacts in electrical contact with spaced apart portions of said resistive material through electrical contact with intermediate spaced apart portions of said protective metal layer that cover said spaced apart portions of said resistive material.
A method of forming an integrated circuit semiconductor device comprising at least one capacitor device and at least one resistor device which method comprises the steps of:
- providing a semiconductor substrate;
- forming a capacitor device having one electrode spaced from said substrate, a second electrode of said capacitor device comprises a heavily doped semiconductor region, said capacitor device having a dielectric layer located between said one electrode and said second electrode;
- and
- forming a resistor device spaced further away from said substrate than said capacitor device, said resistor device comprising a layer portion of resistive material, protective metal layer portions located on exposed surface portions of said layer of resistive material and spaced apart metal contacts in electrical contact with spaced apart portions of said resistive material through electrical contact with intermediate spaced apart portions of said protective metal layer that cover said spaced apart portions of said resistive material.
Dependencies are inferred from the claim text.