Semiconductor element having charge accumulating layer under gate electrode and using single electron phenomenon

A semiconductor device comprising:

• a first gate insulating film formed on a semiconductor substrate;
• a charge accumulating layer containing a magnetic substance and formed on the first gate insulating film;
• a second gate insulating film formed on the charge accumulating layer;
• a gate electrode formed on the second gate insulating film;
• and
• source and drain regions formed in surface portions of the semiconductor substrate such that the gate electrode is interposed therebetween.

A semiconductor device comprising:

• a first charge accumulating layer containing a magnetic substance and directly formed on a semiconductor substrate;
• a first gate insulating film formed on the first charge accumulating layer;
• at least one second charge accumulating layer containing a magnetic substance and formed on the first gate insulating film;
• a second gate insulating film formed on the second charge accumulating layer;
• a gate electrode formed on the second gate insulating film;
• and
• source and drain regions formed in surface portions of the semiconductor substrate such that the gate electrode is interposed therebetween.

A semiconductor device comprising:

• a first gate insulating film formed on a semiconductor substrate;
• a first charge accumulating layer containing a magnetic substance and formed on the first gate insulating film;
• a second gate insulating film formed on the first charge accumulating layer;
• at least one second charge accumulating layer containing a magnetic substance and formed on the second gate insulating film;
• a third gate insulating film formed on the second charge accumulating layer;
• a gate electrode formed on the third gate insulating film;
• and
• source and drain regions formed in surface portions of the semiconductor substrate such that the gate electrode is interposed therebetween.