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US 6,207,983 B1Granted
Charge transfer device, and driving method and manufacturing method for the same
AssigneeNEC Corporation
InventorsNobuhiko Mutoh, Takashi Nakano
Life of this patent
Estimating the term…
Abstract
In a charge transfer device and a driving method therefor, electrons are injected through an insulating film into floating gate 108 or electrons are extracted through the insulating film from the floating gate 108, whereby the potential of the floating gate is converged to a fixed voltage.
Claims8
A charge transfer device provided with a charge detection portion which comprises:
- a floating gate,
- means for detecting the potential variation of said floating gate, and
- means for injecting electrons through an insulating film into said floating gate or means for extracting electrons through an insulating film from said floating gate.
A charge transfer device provided with a charge detection portion which comprises:
- a floating gate;
- means for detecting the potential variation of said floating gate;
- a bias gate which covers at least a part of said floating gate;
- and
- voltage applying means for applying a first voltage to said bias gate to make said floating gate hold the DC bias voltage as an offset level, and applying a second voltage to said bias gate to inject electrons through an insulating film into said floating gate or extract electrons through an insulating film from said floating gate.
2 more elements
A charge transfer device provided with a charge detection portion which comprises:
- a floating gate;
- a buffer amplifier for detecting the potential variation of said floating gate;
- a bias gate which covers at least a part of said floating gate;
- a bias feedback circuit for adding the AC component output of said buffer amplifier to a first DC voltage and applying the addition result to said bias gate for a charge detection period;
- voltage applying means for applying a second DC voltage to said bias gate to inject electrons through an insulating film into said floating gate or extract electrons through an insulating film from said floating gate in a floating gate reset period which is set to be out of said charge detection period.
2 more elements
Dependencies are inferred from the claim text.