High dielectric constant material deposition to achieve high capacitance
AssigneesInternational Business Machines Corporation, Infineon Technologies North America Corp.
InventorsHua Shen, David E. Kotecki, Robert Laibowitz, Katherine Lynn Saenger, Satish D. Athavale, Jenny Lian, Martin Gutsche, Yun-Yu Wang, Thomas Shaw
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Abstract
A method for forming a dielectric layer includes exposing a surface to a first dielectric material in gaseous form at a first temperature. Nuclei of the first dielectric material are formed on the surface. A layer of a second dielectric material is deposited on the surface by employing the nuclei as seeds for layer growth wherein the depositing is performed at a second temperature which is greater than the first temperature.
Claims31
A method for forming a capacitor dielectric layer, comprising the steps of:
- forming a first capacitor electrode;
- exposing a surface of the first capacitor electrode to a first dielectric material in gaseous form at a first temperature;
- forming nuclei of the first dielectric material on the surface of the first capacitor electrode;
- and
- depositing a layer of a second dielectric material on the surface by employing the nuclei as seeds for layer growth wherein the depositing is performed at a second temperature which is greater than the first temperature.
A method for forming a stacked capacitor for a semiconductor memory device, comprising the steps of:
- forming a first capacitor electrode;
- exposing a surface of the first capacitor electrode to barium strontium titanium oxide (BSTO) in gaseous form at a first temperature;
- forming nuclei of the BSTO on the surface of the first capacitor electrode by adjusting at least one of gas composition, flow rate and pressure of the BSTO to provide a grain size and orientation of the nuclei;
- and
- depositing a dielectric layer on the surface by employing the nuclei as seeds for layer growth wherein the depositing is performed at a second temperature which is greater than the first temperature.
A method for forming a dielectric layer, comprising the steps of:
- exposing a surface to a first dielectric material in gaseous form at a first temperature;
- forming nuclei of the first dielectric material on the surface;
- and
- depositing a layer of a second dielectric material on the surface by employing the nuclei as seeds for layer growth wherein the depositing is performed at a second temperature which is greater than the first temperature.
Dependencies are inferred from the claim text.