US 6,207,581 B1 · Method of fabricating node contact hole

Abstract

A method of fabricating a node contact hole is disclosed. The fabrication includes the steps as follows. At first, the first interpoly dielectric (IPD1) layer is formed over the semiconductor substrate. The landing pad is formed in the first interpoly dielectric layer. The polycide bit line is formed on the first interpoly dielectric layer. Afterwards, the second interpoly dielectric (IPD2) layer is formed over the first interpoly dielectric layer. Next, the defined photoresist layer is formed on the second interpoly dielectric layer, then using reflow and curing processes to form the heated photoresist layer. Afterwards, a portion of the second interpoly dielectric layer is firstly etched, using the heated photoresist layer as a mask. The depth is formed in the second interpoly dielectric layer. Then the heated photoresist layer is removed. Next, in order to the silicon nitride layer and the polysilicon layer are deposited over the second interpoly dielectric layer. Then, the polysilicon layer is etched back to expose the silicon nitride layer. Afterwards, a portion of the second interpoly dielectric layer is secondly etched to expose the land pad. Next, in order to the polysilicon layer and the silicon nitride layer are removed over the second interpoly dielectric layer. The node contact hole is formed in the second interpoly dielectric layer.

Claims38

Dependent claims

A method of fabricating a node contact hole on a semiconductor substrate, said method comprising:

forming a first interpoly dielectric (IPD1) layer over a semiconductor structure;
forming a landing pad in said first interpoly dielectric layer;
forming a polycide bit line on said first interpoly dielectric layer;
forming a second interpoly dielectric (IPD2) layer on said polycide bit line, said landing pad, and said first interpoly dielectric layer;
forming a defined photoresist layer on said second interpoly dielectric layer, said defined photoresist layer defining a node contact pattern;
firstly etching a portion of said second interpoly dielectric layer using said defined photoresist layer as a mask;
removing said defined photoresist layer;
depositing a insulating layer on said second interpoly dielectric layer;
depositing a polysilicon layer on said insulating layer;
etching back said polysilicon layer to expose said insulating layer;
secondly etching a portion of said second interpoly dielectric layer to expose said land pad, using said polysilicon layer as a hard mask;
removing said polysilicon layer on said insulating layer;
removing said insulating layer on said second interpoly dielectric layer;
and
forming said node contact hole in said second interpoly dielectric layer, said node contact hole having a critical dimension.

12 more elements

A method of fabricating a node contact hole on a semiconductor substrate, said method comprising:

forming a first interpoly dielectric (IPD1) layer over a semiconductor structure;
forming a landing pad in said first interpoly dielectric layer;
forming a polycide bit line on said first interpoly dielectric layer;
forming a second interpoly dielectric (IPD2) layer on said polycide bit line, said landing pad, and said first interpoly dielectric layer;
forming a defined photoresist layer on said second interpoly dielectric layer;
heating said defined photoresist layer, thereby forming a heated photoresist layer on said second interpoly dielectric layer, said heated photoresist layer defining a node contact pattern;
firstly etching a portion of said second interpoly dielectric layer using said heated photoresist layer as a mask;
forming a depth in said second interpoly dielectric layer;
removing said heated photoresist layer;
depositing a insulating layer on said second interpoly dielectric layer;
depositing a polysilicon layer on said insulating layer;
etching back said polysilicon layer to expose said insulating layer;
secondly etching a portion of said second interpoly dielectric layer to expose said land pad, using said polysilicon layer as a hard mask;
removing said polysilicon layer on said insulating layer;
removing said insulating layer on said second interpoly dielectric layer;
and
forming said node contact hole in said second interpoly dielectric layer, said node contact hole having a critical dimension.

14 more elements

Dependencies are inferred from the claim text.

Method of fabricating node contact hole

Life of this patent

Method of fabricating node contact hole

Life of this patent

Abstract

Claims38