Methods of forming patterned constructions, methods of patterning semiconductive substrates, and methods of forming field emission displays

A method of forming a patterned construction over a substrate, comprising:

• forming a layer over a substrate, the layer having masking particle adhering properties;
• exposing an entirety of the layer to radiation;
• the exposing improving the masking particle adhering properties of the layer;
• after the exposing, contacting the layer with a plurality of the masking particles;
• at least some of the masking particles adhering to the layer, the adhered masking particles being a patterned mask over the substrate;
• and
• etching the substrate, the patterned mask protecting portions of the substrate during the etching to define a patterned construction of the etched substrate.

A method of forming a patterned construction over a substrate, comprising:

• forming a layer over a substrate, the layer having masking particle adhering properties;
• exposing at least one portion of the layer to radiation while leaving at least one other portion of the layer unexposed;
• the exposing altering the masking particle adhering properties of the layer to render one of the exposed or unexposed portions better at adhering masking particles than the other of the exposed and unexposed portions;
• after the exposing, forming an etch mask by contacting the layer with a plurality of the masking particles;
• at least some of the masking particles adhering to said one of the exposed or unexposed portions, the adhered masking particles being the etch mask;
• and
• etching the substrate, the etch mask protecting portions of the substrate during the etching to define a patterned construction of the etched substrate.

A method of patterning a semiconductive substrate, comprising:

• forming a layer over a semiconductive substrate, the layer having a surface which comprises particle-adhering groups;
• exposing at least one portion of the layer to radiation while leaving at least one other portion of the layer unexposed;
• the exposing removing the particle-adhering groups from the exposed portion of the layer while leaving the particle-adhering groups on the unexposed portion;
• after the exposing, adhering a plurality of particles to the remaining particle-adhering groups, the adhered particles being an etch mask disposed over portions of the semiconductive substrate;
• and
• etching the semiconductive substrate, the etch mask protecting the portions of the semiconductive substrate during the etching to define a patterned construction of the etched semiconductive substrate.

A method of forming a patterned mask over a substrate, comprising:

• forming a layer over a substrate, the layer having a surface with exposed nitrogen-containing groups;
• exposing at least one portion of the layer to radiation while leaving at least one other portion of the layer unexposed;
• the exposing rendering one of the exposed or unexposed portions better at bonding the masking particles than the other of the exposed and unexposed portions;
• after the exposing, bonding masking particles to the layer;
• the masking particles having exposed moieties reactive with the nitrogen-containing groups and the bonding comprising reacting the exposed moieties of the masking particles with the nitrogen-containing groups;
• the bonded masking particles defining a mask over the semiconductive substrate;
• and
• etching the semiconductive substrate;
• the mask of bonded masking particles protecting an underlying portion of the substrate.

A method of forming a mask over a semiconductive substrate, comprising:

• forming a layer over a semiconductive substrate, the layer having a surface which comprises nitrogen-containing groups;
• exposing at least one portion of the layer to radiation while leaving at least one other portion of the layer unexposed;
• the exposing removing the nitrogen-containing groups from the exposed portion of the layer while leaving the nitrogen-containing groups on the unexposed portion;
• after the exposing, adhering a plurality of particles to the remaining nitrogen-containing groups;
• the particles comprising exposed moieties reactive with the nitrogen-containing groups;
• the adhering comprising reacting the exposed moieties with the nitrogen-containing groups;
• the adhered particles defining a mask over the semiconductive substrate;
• and
• etching the semiconductive substrate, the mask of adhered particles protecting an underlying portion of the substrate.

A method of forming a mask over a semiconductive substrate, comprising:

• forming a layer of individual molecules over a semiconductive substrate, the individual molecules comprising two ends and a linkage between the two ends, one of the two ends being directed toward the semiconductive substrate and the other of the two ends being directed away from the semiconductive substrate;
• providing a particle-adhering group bound to said other of the two ends of at least some of the individual molecules
• exposing at least one portion of the layer to radiation, while leaving at least one other portion of the layer unexposed;
• the exposing removing the particle-adhering groups from the exposed molecules while leaving the particle-adhering groups of the unexposed molecules;
• after the exposing, adhering a plurality of particles to the remaining particle-adhering groups, the adhered particles forming a protective mask over portions of the semiconductive substrate;
• and
• etching the semiconductive substrate, the protective mask protecting t portions of the semiconductive substrate during the etching, unprotected portions of the semiconductive substrate being etched.

A method of forming a field emission display, comprising:

• forming a film over a substrate, the film comprising a plurality of individual molecules, the individual molecules comprising two ends, one of the two ends being directed toward the substrate and the other of the two ends being directed away from the substrate;
• providing particle-adhering groups bound to said other of the two ends of at least some of the individual molecules;
• adhering a plurality of particles to the particle-adhering groups, the adhered particles being a mask over the substrate;
• etching the substrate, the mask protecting portions of the substrate during the etching;
• forming a Plurality of emitters from the etched substrate;
• and
• providing a display screen spaced from said emitters.

A method of forming a field emission display, comprising:

• forming a film over a substrate, the film having masking particle adhering properties;
• exposing at least one portion of the film to radiation while leaving at least one other portion of the film unexposed;
• the exposing altering the masking particle adhering properties of the film to render one of the exposed or unexposed portions better at adhering masking particles than the other of the exposed and unexposed portions;
• after the exposing, contacting the film with masking particles;
• a plurality of the masking particles adhering to said one of the exposed or unexposed portions, the adhered masking particles defining a patterned mask over the semiconductive substrate;
• etching the substrate, the adhered particles of the patterned mask protecting portions of the substrata during the etching;
• forming a plurality of emitters from the etched substrate;
• and
• providing a display screen spaced from said emitters.

A method of forming a field emission display, comprising:

• forming a material over a substrate, the material having a surface with exposed nitrogen-containing groups;
• exposing at least one portion of the material to radiation while leaving at least one other portion of the material unexposed;
• the exposing rendering one of the exposed or unexposed portions better at bonding the masking particles than the other of the exposed and unexposed portions;
• after the exposing, bonding the material with masking particles;
• the masking particles having exposed moieties reactive with the nitrogen-containing groups and the bonding comprising reacting the exposed moieties of the masking particles with the nitrogen-containing groups;
• the bonded masking particles defining a mask over the semiconductive substrate;
• etching the substrate, the mask protecting portions of the substrate during the etching;
• forming a plurality of emitters from the substrate;
• and
• providing a display screen spaced from said emitters.