Prevention of Cu dendrite formation and growth
AssigneeAdvanced Micro Devices, Inc.
InventorsDiana M. Schonauer, Steven C. Avanzino, Kai Yang
Life of this patent
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Abstract
The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP with a solution comprising HF and H2O. Embodiments include removing up to 50 Å of silicon oxide by treating the wafer in a spray acid processor with a solution containing HF and deionized water at a water to acid ratio of about 100:1 to about 250:1.
Claims19
A method of manufacturing a semiconductor device on a wafer, the method comprising:
- forming a copper (Cu) or Cu alloy interconnection pattern comprising a dense array of spaced apart Cu or Cu alloy lines bordering an open dielectric field on a surface of the wafer;
- and
- chemically treating the wafer surface with a solution comprising hydrofluoric acid (HF) and de-ionized water (H2O).
A method for preventing the growth of dendrites emanating from copper (Cu) or Cu alloy lines into a bordering open dielectric field on a wafer surface, the method comprising chemically treating the wafer surface with a solution containing hydrofluoric acid (HF) and de-ionized water (H2O) to remove a portion of dielectric material from the surface of the open dielectric field and from between the lines.
Dependencies are inferred from the claim text.