Fabricating method of glue layer and barrier layer
AssigneeUnited Microelectronics Corp.
InventorsChein-Cheng Wang, Shih-Chanh Chang
Life of this patent
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Abstract
A method of fabricating a glue layer and a barrier layer. A Ti layer is formed with a collimator sputtering in the via opening or the contact opening of the substrate. Through the control of flow of N2 and Ar, a nitride mode TiNx layer is formed on the Ti layer by sputtering. The nitride mode TiNx layer and the Ti layer uncovered by the nitride mode TiNx layer are treated with N2 RF plasma. This strengthens the structure of the nitride mode TiNx layer and allows the reaction with the exposed Ti layer so that it is transformed into a TiNx layer.
Claims14
A fabricating method of forming a glue layer and a barrier layer, comprising the steps of:
- forming a Ti layer on a substrate;
- forming a nitride mode TiNx layer on the Ti layer;
- and
- performing a step of N2 radiation frequency (RF) plasma treatment at a pressure of about 1-10 Torr, a temperature of about 200-360° C., an N2 flow rate of about 4000-6000 sccm, and a power of about 80-200 W.
A method of fabricating a metal interconnect applicable to a substrate, in which a dielectric layer is formed on the substrate with a via opening in the dielectric layer to expose the substrate, comprising the steps of:
- forming a Ti layer on the substrate to cover the via opening;
- forming a nitride mode TiNx layer on the Ti layer;
- performing a step of N2 radiation frequency (RF) plasma treatment at a pressure of about 1-10 Torr, a temperature of about 200-360° C., an N2 flow rate of about 4000-6000 sccm, and a power of about 80-200 W;
- forming a metal layer on the substrate to fill the via opening;
- and
- defining the Ti layer, the nitride mode TiNx layer, and the metal layer.
Dependencies are inferred from the claim text.