Method of forming titanium silicide
AssigneesAnam Semiconductor Inc., Amkor Technology, Inc.
InventorJae-Won Han
Life of this patent
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Abstract
A method for forming a titanium silicide on a silicon wafer. The method includes the steps of removing native oxide film formed on the silicon wafer; depositing a titanium thin film on the silicon wafer using standard type (low power) sputtering method; quickly heat-treating the silicon wafer on which the titanium thin film is deposited so that diffusion occurs between the titanium thin film and the silicon wafer, thereby forming the titanium silicide, and removing the titanium thin film. A degas process before the titanium deposition is proposed also to remove impurities on the wafer.
Claims16
A method for forming titanium silicide on a silicon wafer, the method comprising:
- removing a native oxide film formed on the silicon wafer;
- conducting a degas process by heating the silicon wafer at a low temperature in a degas chamber;
- sputtering a titanium thin film having a uniform thickness on the silicon wafer using a low-power, direct-current sputtering method that generates titanium atoms having a low kinetic energy and moving in random directions;
- rapid thermal processing the silicon wafer on which the titanium thin film is deposited so that diffusion occurs between the titanium thin film and the silicon wafer, thereby forming the titanium silicide;
- and
- removing the titanium thin film.
A method, comprising:
- providing a semiconductor wafer having a silicon region with a native oxide layer formed thereon;
- removing the native oxide layer;
- degassing the semiconductor wafer by heating the wafer to a temperature in the range of 100 to 200° C.;
- depositing a thin, uniform thickness of a silicide forming metal on the silicon region using a low-power, direct-current sputtering method that generates atoms of the metal having a low kinetic energy and moving in random directions;
- and
- causing the silicide forming metal to react with silicon of the silicon region to form metal silicide on the silicon region.
A method, comprising:
- providing a semiconductor wafer having a silicon region with a native oxide layer formed thereon;
- removing the native oxide layer;
- degassing the semiconductor wafer by heating the wafer to a temperature greater than 200° C.;
- removing any thermal oxide film formed on the silicon region
- depositing a thin, uniform thickness of a silicide-forming metal on the silicon region using a low-power, direct-current sputtering method that generates atoms of the metal having a low kinetic energy and moving in random directions;
- and
- causing the silicide forming metal to react with silicon of the silicon region to form metal silicide on the silicon region.
Dependencies are inferred from the claim text.