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US 6,207,531 B1Granted
Shallow trench isolation using UV/O3 passivation prior to trench fill
AssigneesProMOS Technologies Inc., Mosel Vitelic, Inc., Infineon Technologies AG
InventorMao Pen-Liang
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Abstract
A method of forming a shallow trench isolation on a substrate is disclosed. The method comprises: forming a pad oxide layer on the substrate; forming a dielectric layer on the pad oxide layer; forming at least one trench in the substrate; forming an oxide liner along the walls and bottom of the trench, the oxide liner formed from a UV/O3 process; and forming a CVD oxide layer for isolation atop the oxide liner and within the trench.
Claims10
A method of forming a shallow trench isolation on a substrate, said method comprising:
- forming a pad oxide layer on said substrate;
- forming a dielectric layer on said pad oxide layer;
- forming at least one trench in said substrate;
- forming an oxide liner along the walls and bottom of said at least one trench, said oxide liner formed from a UV/O3 process;
- and
- forming a CVD oxide layer for isolation atop said oxide liner and within said at least one trench.
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Dependencies are inferred from the claim text.