Method to fabricate electrodes for high-K dielectrics

Abstract

The present invention proposed a method for fabricating electrodes, especially the electrodes for capacitors which incorporates the application of high dielectric constant dielectrics. The present process avoids the conventional etching issues with conductive materials, especially conductive materials like platinum (Pt), Ruthenium oxide (RuO2), Iridium oxide (IrO2) and etc. A method in the invention for fabricating electrodes on a semiconductor substrate includes the following steps. After a first step forming a node-defining layer on the substrate, a subsequent step of patterning the node-defining layer is carried out to form a plurality of node openings within the node-defining layer. A first conductive layer is formed to fill into the openings and to form over the node-defining layer. A step of removing a portion of the first conductive layer is performed to the portion which is located outside the openings. Finally, a step of removing the node-defining layer is done to leave a plurality of first electrodes.

Dependencies are inferred from the claim text.