Method of stripping a photoresist from a semiconductor substrate using dimethylacetamide or a combination of monoethanolamine and dimethylsulfoxide

In the fabrication of semiconductor devices, a method of forming a pattern on a semiconductor substrate, said method comprising the steps of:

• providing a semiconductor substrate having a film at the surface thereof;
• depositing a photoresist on the film;
• exposing regions of the photoresist to light;
• developing the photoresist exposed to light to remove selected portions of the photoresist from the film and thereby expose portions of the film;
• etching the exposed portions of the film;
• and
• subsequently subjecting portions of the photoresist remaining on the film to a stripper composition consisting of dimethylacetamide for 180 to 300 seconds to completely remove the photoresist from the film, wherein the dimethylacetamide is maintained at a temperature within a range of 10° C. to 40° C.