Chemically amplified resist material and process for the formation of resist patterns
AssigneeFujitsu Limited
InventorsSatoshi Takechi, Isamu Hanyu
Life of this patent
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Abstract
Chemically amplified resist material which comprises: I. an acid-sensitive terpolymer produced upon copolymerization of (i) a first monomer unit having a structure which contains an alkali-soluble group protected with an alicyclic hydrocarbon-containing protective group, (ii) a second monomer unit having a lactone structure, and (iii) a third monomer unit having a structure which contains an alkali-soluble group protected with a protective group different from that of said first monomer unit; and II. a photoacid generator capable of producing an acid upon exposure to a patterning radiation, and the process for forming resist patterns using this resist material.
Claims8
A chemically amplified resist material which comprises:
- I. an acid-sensitive terpolymer produced upon copolymerization of
- (i) a first monomer unit having a structure which contains an alkali-soluble group protected with an alicyclic hydrocarbon-containing protective group and in which structure said alkali-soluble group is cleaved with an acid to thereby permit said terpolymer to exhibit a solubility in an alkaline solution,
- (ii) a second monomer unit having a lactone structure, and
- (iii) a third monomer unit having a structure which contains an alkali-soluble group protected with a protective group different from that of said first monomer unit and in which structure said alkali-soluble group is cleaved with an acid to thereby permit said terpolymer to exhibit a solubility in an alkaline solution,
- said second monomer unit being contained in an amount of 10 to 35% by mole based on a total amount of said terpolymer;
- and
- II. a photoacid generator capable of producing an acid upon exposure to a patterning radiation.
A process for the formation of resist patterns which comprises the steps of:
- coating a chemically amplified resist material on a substrate to be fabricated in order to form a resist film thereon, said resist material comprising:
- I. an acid-sensitive terpolymer produced upon copolymerization of
- (i) a first monomer unit having a structure which contains an alkali-soluble group protected with an alicyclic hydrocarbon-containing protective group and in which structure said alkali-soluble group is cleaved with an acid to thereby permit said terpolymer to exhibit a solubility in an alkaline solution,
- (ii) a second monomer unit having a lactone structure, and
- (iii) a third monomer unit having a structure which contains an alkali-soluble group protected with a protective group different from that of said first monomer unit and in which structure said alkali-soluble group is cleaved with an acid to thereby permit said terpolymer to exhibit a solubility in an alkaline solution,
- said second monomer unit being contained in an amount of 10 to 35% by mole based on a total amount of said terpolymer;
- and
- II. a photoacid generator capable of producing an acid upon exposure to a patterning radiation;
- selectively exposing said resist film to a patterning radiation capable of causing generation of an acid from said photoacid generator;
- and
- developing a latent image formed in said resist film during said exposure step.
Dependencies are inferred from the claim text.