Silicon nitride etch bath system
AssigneeAdvanced Micro Devices, Inc.
InventorsJeffrey S. Glick, Erwin E. Grund
Life of this patent
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Abstract
An improved silicon nitride etch bath system is provided. The improved etch bath system includes a silicon dioxide condensing system formed of a heat exchanger and a secondary filter. The heat exchanger is provided for removing a small portion of phosphoric acid from an etching bath and for cooling of the same. The secondary filter is used for extracting silicon dioxide particles in the small portion of the phosphoric acid and is operatively connected to the heat exchanger before returning the same to the etching bath. In this manner, the concentration of silicon dioxide in the etching bath will be prevented from being saturated.
Claims7
A method for extracting silicon dioxide from a silicon-nitride etching bath comprising the steps of:
- providing an etching bath containing phosphoric acid;
- depositing semiconductor wafers with silicon-nitride films in said etching bath;
- circulating the phosphoric acid from the etching bath;
- filtering the phosphoric acid;
- controlling temperature of the phosphoric acid before returning the same to the etching bath;
- cooling a small portion of the phosphoric acid from the etching bath;
- and
- extracting silicon dioxide particles in the small portion of the phosphoric acid before returning the same to the etching bath.
A silicon nitride etch bath system comprising in combination:
- an etching bath containing phosphoric acid;
- semiconductor wafers with silicon-nitride films being deposited in said etching bath;
- a pump for circulating said phosphoric acid from said etching bath to its outlet;
- a primary filter operatively connected to said pump outlet for filtering said phosphoric acid;
- a heater operatively connected to said primary filter to control temperature of said phosphoric acid before returning the same to said etching bath;
- heat exchanger means operatively connected also to said pump outlet for removing a small portion of said phosphoric from said etching bath and for cooling of the same;
- and
- means operatively connected to said heat exchanger means for extracting silicon dioxide particles in the small portion of said phosphoric acid before returning the same to said etching bath;
- whereby the concentration of silicon dioxide in said etching bath will be prevented from being saturated.
Dependencies are inferred from the claim text.