Method to reduce overhead time in an ion metal plasma process
AssigneeApplied Materials, Inc.
InventorKenny King-tai Ngan
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Abstract
The present invention provides a method of reducing the overhead time associated with a high density ion metal plasma process. The method provides flowing a gas at a first flow rate and exhausting the chamber at a constant rate so that the rate at which gases are exhausted from the chamber at a steady state equals the flow rate of gases into the chamber. Another method provides flowing a gas at a first rate and then at a second flow rate which is about equal to the rate at which the gas is exhausted from the chamber at a steady state.
Claims18
A method of reducing overhead time in a process chamber, comprising:
- a) introducing a substrate into the process chamber;
- b) flowing one or more gases into the process chamber at a first flow rate;
- c) simultaneously exhausting the chamber at a first exhaust rate;
- and
- d) monitoring a pressure in the chamber to determine an occurrence of a steady state pressure;
- e) initiating deposition of a layer on the substrate when the steady state is achieved.
A method of processing a substrate, comprising:
- a) introducing a substrate into a chamber;
- b) flowing one or more gases into the chamber at a first inflow rate initially higher than an exhaust rate at which the chamber is being pumped;
- c) monitoring a pressure in the chamber to determine an occurrence of a steady state pressure;
- and
- d) initiating deposition of a layer on the substrate when the steady state is achieved.
A method of reducing overhead time in a process chamber, comprising:
- a) pumping down the chamber to a pressure below a desired steady state pressure;
- b) monitoring a chamber pressure to determine a point at which a process pressure is achieved;
- c) exhausting the chamber at a first exhaust rate;
- d) flowing one or more gases into the process chamber at a first flow rate greater than a second flow rate at which the process pressure can be maintained at the desired steady state pressure;
- then
- e) flowing the one or more gases into the process chamber at the second flow rate, and allowing the chamber to reach the steady state;
- and
- f) initiating deposition of a layer onto a substrate when the process pressure is achieved.
Dependencies are inferred from the claim text.