Method and apparatus for fabricating semiconductor

A semiconductor fabrication method for evaporating a material in a growth chamber by a molecular beam epitaxy technique to fabricate a semiconductor, using a semiconductor fabrication apparatus including:

• an ultra-high vacuum chamber including a liquid nitrogen cold trap therein, the ultra-high vacuum chamber being connected to the growth chamber via a valve;
• a first evacuation system including an ultra-high vacuum evacuation system, the first evacuation system being connected to the ultra-high vacuum chamber;
• and
• a second evacuation system including an evacuation system capable of conducting an evacuation operation even in a low vacuum condition, the second evacuation system being connected to the liquid nitrogen cold trap,
• the method comprising the steps of:
• stopping the evacuation operation of the second evacuation system, and evacuating the ultra-high vacuum chamber and the growth chamber using the first evacuation system, while conducting a growth process with respect to a wafer in the growth chamber;
• and
• stopping the evacuation operation of the first evacuation system, and purging molecules absorbed onto the liquid nitrogen cold trap using the second evacuation system.