Method of determining oxygen precipitation behavior in a silicon monocrystal
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsHiroshi Takeno, Ken Aihara
Life of this patent
Estimating the term…
Abstract
A method of determining oxygen precipitation behavior in a silicon monocrystal through use of a programmed computer. According to this method, an initial oxygen concentration of a silicon monocrystal, an impurity concentration or resistivity of the silicon monocrystal, and conditions of heat treatment performed on the silicon monocrystal are input, and an amount of precipitated oxygen and bulk defect density of the silicon monocrystal after the heat treatment are calculated based on the input data. The method enables quick, simple, and accurate determination of an amount of precipitated oxygen and bulk defect density in silicon during or after heat treatment.
Claims6
A method of determining oxygen precipitation behavior in a silicon monocrystal through use of a programmed computer, comprising the steps of:
- inputting data including an initial oxygen concentration of a silicon monocrystal, an impurity concentration or resistivity of the silicon monocrystal, and conditions of heat treatment performed on the silicon monocrystal;
- and
- calculating an amount of precipitated oxygen and bulk defect density of the silicon monocrystal after the heat treatment based on the input data.
Dependencies are inferred from the claim text.