Back to results
US 6,204,546 B1Granted
Silicon-on-insulator substrates using low dose implantation
AssigneeInternational Business Machines Corporation
InventorsPeter Roitman, Devendra Kumar Sadana
Life of this patent
Estimating the term…
Abstract
An SOI substrate and method of forming is described incorporating the steps of implanting oxygen under two conditions and performing two high temperature anneals at temperatures above 1250° C. and above 1300° C., respectively, at two respective oxygen concentrations. The invention overcomes the problem of high SOI substrate fabrication cost due to ion implant time and of getting high quality buried oxide (BOX) layers below a thin layer of single crystal silicon.
Claims7
A structure comprising:
- a silicon containing substrate,
- a buried continuous layer of silicon oxide formed by ion implantation of oxygen, and
- a silicon layer above said buried oxide layer,
- said layer of silicon oxide having a smooth substantially flat upper surface formed by growing said buried oxide layer into said silicon layer, and wherein
- said layer of silicon oxide has a thickness in the range from about less than 500 angstroms to about greater than 1000 angstroms.
2 more elements
A structure comprising:
- a silicon containing substrate,
- a buried continuous layer of silicon oxide formed by ion implantation of oxygen, and
- a silicon layer above said buried oxide layer,
- said layer of silicon oxide having a smooth substantially flat upper surface formed by growing said buried oxide layer into said silicon layer, and
- wherein said layer of silicon oxide has a breakdown voltage greater than 8 MV/cm.
2 more elements
A structure comprising:
- a silicon containing substrate,
- a buried continuous layer of silicon oxide formed by ion implantation of oxygen, and
- a silicon layer above said buried oxide layer,
- said layer of silicon oxide having a smooth substantially flat upper surface formed by growing said buried oxide layer into said silicon layer, and
- wherein said layer of silicon oxide has less than 1 short per cm2 from its upper surface to its lower surface.
2 more elements
Dependencies are inferred from the claim text.