Semiconductor device and manufacturing method thereof

A semiconductor device, comprising:

• a MOS transistor formed on a semiconductor substrate;
• at least one silicide protection structure configured to prevent a silicide film formation in a predetermined portion on a surface of an active region outward side faces of a gate electrode;
• a first semiconductor layer of a first concentration provided in a surface of said semiconductor substrate beneath said at least one silicide protection structure;
• and
• a second semiconductor layer of a second concentration provided in a surface of said semiconductor substrate excluding a portion in which said at least one silicide protection structure is formed,
• wherein said silicide film is provided on said second semiconductor layer,
• said second semiconductor layer is a source/drain layer of said MOS transistor,
• said first concentration is lower than said second concentration,
• said at least one silicide protection structure comprises an insulating film, and
• said first semiconductor layer is a semiconductor layer of a conductivity type opposite to that of said source/drain layer.

A semiconductor device, comprising:

• a MOS transistor formed on a semiconductor substrate;
• at least one silicide protection structure configured to prevent a silicide film formation in a predetermined portion on a surface of an active region outward side faces of a gate electrode;
• a first semiconductor layer of a first concentration provided in a surface of said semiconductor substrate beneath said at least one silicide protection structure;
• a second semiconductor layer of a second concentration provided in a surface of said semiconductor substrate excluding a portion in which said at least one silicide protection structure is formed;
• and
• a field shield gate electrode defining said active region and electrically isolating said MOS transistor from other semiconductor elements, provided on said semiconductor substrate,
• wherein said silicide film is provided on said second semiconductor layer,
• said second semiconductor layer is a source/drain layer of said MOS transistor,
• said first concentration is lower than said second concentration,
• said field shield gate electrode has a field shield insulating film, a conductor layer, and a conductor layer upper insulating film, laminated in this order on said semiconductor substrate,
• said at least one silicide protection structure and said field shield gate electrode are formed simultaneously with an identical material, and
• said first semiconductor layer is a semiconductor layer having a conductivity type identical with that of said source/drain layer of said MOS transistor.