US 6,204,528 B1 · Dynamic random access memory structure

Abstract

A dynamic random access memory structure. The structure includes a substrate having protruding sections and recessed sections, in which the protruding sections have sidewalls and a substrate surface is located between the protruding sections and the recessed sections. A gate oxide layer is formed on the sidewalls of the protruding sections and on the surfaces between the protruding sections and the recessed sections. A doped region is formed near the bottom of each protruding section, and these doped regions serve as buried bit lines. A channel region is formed in the protruding section and a gate electrode is formed on each side of the channel region. A storage electrode is connected to the other end of the protruding section and a word line is connected to the gate electrode. The word line and the buried bit line are perpendicular to each other.

Claims4

Dependent claims

A dynamic random access memory structure, comprising:

a substrate that includes protruding sections and recessed sections;
a gate oxide layer on the protruding sections and on the recessed sections
a doped region at a bottom end of each protruding section, wherein the doped region functions as a buried bit line;
a channel region in each protruding section;
a pair of gate electrodes, one on each side of the channel region;
a storage electrode electrically connected to another end of the protruding section;
and
a word line electrically connected to the gate electrode, wherein the word line runs in a direction perpendicular to the buried bit line.

5 more elements

Dependencies are inferred from the claim text.

Dynamic random access memory structure

Life of this patent

Dynamic random access memory structure

Life of this patent

Abstract

Claims4